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"hsu b c"的相关文件
显示项目 6-15 / 37 (共4页)
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| 臺大學術典藏 |
2018-09-10T04:33:14Z |
Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes
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Lin, C.-H.; Yuan, F.; Hsu, B.-C.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:33:14Z |
A high efficient 820 nm MOS Ge quantum dot photodetector
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Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:33:14Z |
Growth and electrical characteristics of liquid-phase deposited SiO2 on Ge
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Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:33:13Z |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Liu, C.W.; Hsu, B.-C.; Chen, K.-F.; Lee, M.H.; Shie, C.-R.; Chen, P.-S.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:13:01Z |
Roughness-enhanced reliability of MOS tunneling diodes
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Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:13:01Z |
Oxide roughness effect on tunneling current of MOS diodes
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Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T04:13:01Z |
High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity
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Hsu, B.-C.; Chang, S.T.; Shie, C.-R.; Lai, C.-C.; Chen, P.S.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T03:48:06Z |
A PMOS tunneling photodetector
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Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T03:48:06Z |
A comprehensive study of inversion current in MOS tunneling diodes
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Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W.; CHEE-WEE LIU |
| 臺大學術典藏 |
2018-09-10T03:48:04Z |
Oxide roughness enhanced reliability of MOS tunneling diodes
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Lin, C.-H.; Lee, M.H.; Hsu, B.-C.; Chen, K.-F.; Shie, C.-R.; Liu, C.W.; CHEE-WEE LIU |
显示项目 6-15 / 37 (共4页)
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