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"hsu b c"的相關文件
顯示項目 21-37 / 37 (共2頁) 1 2 > >> 每頁顯示[10|25|50]項目
| 國立臺灣大學 |
2004 |
Novel MIS Ge–Si Quantum-Dot Infrared Photodetectors
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Hsu, B.-C.; Lin, C.-H.; Kuo, P.-S.; Chang, S. T.; Chen, P. S.; Liu, C. W.; Lu, J.-H.; Kuan, C. H. |
| 國立臺灣大學 |
2003-12 |
Modeling and simulation of high-bandwidth Si-based MOS/SOI photodetectors
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Liang, C.Y.; Hsu, B.C.; Lin, C.H.; Chang, S.T.; Liu, C.W. |
| 國立臺灣大學 |
2003-12 |
MOS Ge/Si quantum dot infrared photodetectors with quantum dot and wetting layer responses
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Hsu, B.C.; Chang, S.T.; Kuo, P.S.; Chen, P.S.; Liu, C.W.; Lu, J.H.; Kuan, C.H. |
| 國立臺灣大學 |
2003 |
Isotope effect of hydrogen release in metal/oxide/n-silicon tunneling diodes
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Lin, C. -H.; Yuan, F.; Hsu, B. -C.; Liu, C. W. |
| 國立臺灣大學 |
2003 |
Growth and Electrical Characteristics of Liquid-Phase Deposited SiO2 on Ge
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Hsu, B.-C.; Hua, W.-C.; Shie, C.-R.; Chen, K.-F.; Liu, C. W. |
| 國立臺灣大學 |
2003 |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu |
| 國立臺灣大學 |
2003 |
A High Efficient 820 nm MOS Ge Quantum Dot Photodetector
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Hsu, B.-C.; Chang, S.T.; Chen, T.-C.; Kuo, P.-S.; Chen, P.S.; Pei, Z.; Liu, C.W. |
| 臺大學術典藏 |
2003 |
Strain-induced growth of SiO2 dots by liquid phase deposition
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Shie, C.-R.; Chen, Pang-Shiu; LiuCW; Lee, M. H.; Chen, K.-F.; Hsu, B.-C.; Liu, C. W.; Liu, C. W.; Hsu, B.-C.; Chen, K.-F.; Lee, M. H.; Shie, C.-R.; Chen, Pang-Shiu |
| 國立臺灣大學 |
2002-12 |
High efficient 820 nm MOS Ge quantum dot photodetectors for short-reach integrated optical receivers with 1300 and 1550 nm sensitivity
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Hsu, B.C.; Chang, S.T.; Shie, C.R.; Lai, C.C.; Chen, P.S.; Liu, C.W. |
| 國立臺灣大學 |
2002 |
Roughness- Enhanced Reliability of MOS Tunneling Diodes
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Lin, C.-H.; Yuan, F.; Shie, C.-R.; Chen, K.-F.; Hsu, B.-C.; Lee, M.H.; Pai, W.W.; Liu, C.W. |
| 國立臺灣大學 |
2002 |
Oxide roughness effect on tunneling current of MOS diodes
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Hsu, B.-C.; Chen, K.-F.; Lai, C.-C.; Lee, S.W.; Liu, C.W. |
| 國立臺灣大學 |
2001-12 |
Novel photodetectors using metal-oxide-silicon tunneling structures
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Hsu, B.C.; Liu, W.T.; Lin, C.H.; Liu, C.W. |
| 國立臺灣大學 |
2001-12 |
Oxide roughness enhanced reliability of MOS tunneling diodes
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Lin, C.H.; Lee, M.H.; Hsu, B.C.; Chen, K.F.; Shie, C.R.; Liu, C.W. |
| 國立臺灣大學 |
2001 |
A PMOS Tunneling Photodetector
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Hsu, B.-C.; Liu, C.W.; Liu, W.T.; Lin, C.-H. |
| 國立臺灣大學 |
2001 |
A Comprehensive Study of Gate Inversion Current of Metal-Oxide-Silicon Tunneling diodes
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Lin, C.-H.; Hsu, B.-C.; Lee, M.H.; Liu, C.W. |
| 國立臺灣大學 |
2000 |
A Novel Photodetector Using MOS Tunneling Structures
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Liu, C.W.; Liu, W.T.; Lee, M.H.; Kuo, W.S.; Hsu, B.C. |
| 國立臺灣大學 |
1994-01 |
Insertion-Reactions of Square-Planar Diorganoplatinum. 1. Scope and Mechanisms of Stereoselective Carbonylation, Decarbo
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Chen, Jwu-Ting; Yeh, Y. S.; Yang, C. S.; Tsai, F. Y.; Huang, G. L.; Hsu, B. C.; Huang, T. M.; Chen, Y. S.; Lee, G. H.; Cheng, M. C.; Wang, C. C.; Wang, Yu |
顯示項目 21-37 / 37 (共2頁) 1 2 > >> 每頁顯示[10|25|50]項目
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