|
English
|
正體中文
|
简体中文
|
总笔数 :0
|
|
造访人次 :
52587544
在线人数 :
764
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"hsu cch"的相关文件
显示项目 1-7 / 7 (共1页)
1
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:27:35Z |
A numerical model for simulating MOSFET gate current degradation by considering the interface state generation
|
Yih, CM; Chung, SS; Hsu, CCH |
| 國立交通大學 |
2014-12-08T15:26:51Z |
Investigation of the gate dielectric oxidation treatment in trench gate power devices
|
Lin, MJ; Liaw, CE; Chang, JJ; Chang, FL; Hsu, CCH; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:26:18Z |
A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cell
|
Chung, SS; Chiang, PY; Chou, G; Huang, CT; Chen, P; Chu, CH; Hsu, CCH |
| 國立交通大學 |
2014-12-08T15:04:13Z |
DIRECT OBSERVATION OF CHANNEL-DOPING-DEPENDENT REVERSE SHORT-CHANNEL EFFECT USING DECOUPLED C-V TECHNIQUE
|
GUO, JC; HSU, CCH; CHUNG, SSS |
| 國立交通大學 |
2014-12-08T15:03:44Z |
ANOMALOUS REVERSE SHORT-CHANNEL EFFECT IN P+ POLYSILICON GATED P-CHANNEL MOSFET
|
CHANG, CY; LIN, CY; CHOU, JW; HSU, CCH; PAN, HT; KO, J |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET
|
GUO, JC; CHANG, MC; LU, CY; HSU, CCH; CHUNG, SSS |
| 國立交通大學 |
2014-12-08T15:03:14Z |
SUPPRESSION OF BORON PENETRATION IN BF2-IMPLANTED P-TYPE GATE MOSFET BY TRAPPING OF FLUORINES IN AMORPHOUS GATE
|
LIN, CY; CHANG, CY; HSU, CCH |
显示项目 1-7 / 7 (共1页)
1
每页显示[10|25|50]项目
|
