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"hsu heng tung"的相关文件
显示项目 26-35 / 83 (共9页)
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| 國立交通大學 |
2018-08-21T05:54:09Z |
Reliability improvement in GaN HEMT power device using a field plate approach
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Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:54:04Z |
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
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Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:05Z |
Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
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Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:16Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
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Tsai, Szu-Ping; Hsu, Heng-Tung; Wuerfl, Joachim; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:59Z |
30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT
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Rasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi |
显示项目 26-35 / 83 (共9页)
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