| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
|
Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
|
CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
|
Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T11:20:38Z |
Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
|
Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Y. |
| 國立交通大學 |
2015-07-21T08:29:41Z |
Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics
|
Tsai, Szu-Ping; Hsu, Heng-Tung; Tu, Yung-Yi; Chang, Edward Yi |
| 國立成功大學 |
2015-03 |
Terahertz Negative Refraction in a High-Temperature Superconducting Material
|
Wu, Meng-Ru; Hsu, Heng-Tung; Wu, Chien-Jang; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-16T06:15:24Z |
High Electron Mobility Transistor and Method for Fabricating the Same
|
Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-16T06:15:14Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:15:04Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
|
CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:14:14Z |
High electron mobility transistor and method for fabricating the same
|
Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-08T15:47:54Z |
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
|
Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao |
| 國立交通大學 |
2014-12-08T15:40:50Z |
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
|
Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:38:24Z |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
|
Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin |
| 國立交通大學 |
2014-12-08T15:37:07Z |
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
|
Wang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
|
Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:34:36Z |
Investigation of the Flip-Chip Package With BCB Underfill for W-Band Applications
|
Wang, Chin-Te; Hsu, Li-Han; Wu, Wei-Cheng; Hsu, Heng-Tung; Chang, Edward Yi; Hu, Yin-Chu; Lee, Ching-Ting; Tsai, Szu-Ping |
| 國立交通大學 |
2014-12-08T15:33:24Z |
Assessment of Thermal Impact on Performance of Metamorphic High-Electron-Mobility Transistors on Polymer Substrates Using Flip-Chip-on-Board Technology
|
Wang, Chin-Te; Hsu, Heng-Tung; Chiang, Che-Yang; Chang, Edward Yi; Lim, Wee-Chin |
| 國立交通大學 |
2014-12-08T15:30:48Z |
Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band
|
Chang, Chia-Hua; Hsu, Heng-Tung; Huang, Lu-Che; Chiang, Che-Yang; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:29:52Z |
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
|
Chang, Edward-Yi; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:29:32Z |
Performance Evaluation of InGaSb/AlSb P-Channel High-Hole-Mobility Transistor Faricated Using BCl3 Dry Etching
|
Yu, Chia-Hui; Hsu, Heng-Tung; Chiang, Che-Yang; Kuo, Chien-I; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:28:33Z |
Bias-Dependent Radio Frequency Performance for 40nm InAs High-Electron-Mobility Transistor with a Cutoff Frequency Higher than 600GHz
|
Fatah, Faiz; Kuo, Chien-I; Hsu, Heng-Tung; Chiang, Che-Yang; Hsu, Ching-Yi; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:27:17Z |
Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate
|
Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Tung; Chang, Edward Yi; Hsu, Li-Han; Lim, Wee-Chin; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:25:10Z |
A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
|
Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Chen, Yu-Lin; Biswas, Dhrubes |
| 國立交通大學 |
2014-12-08T15:23:38Z |
Effect of Gate Length on Device Performances of AlSb/InAs High Electron Mobility Transistors Fabricated Using BCl3 Dry Etching
|
Kuo, Chien-I; Hsu, Heng-Tung; Hsu, Ching-Yi; Yu, Chia-Hui; Ho, Han-Chieh; Chang, Edward Yi; Chyi, Jen-Inn |
| 國立交通大學 |
2014-12-08T15:20:45Z |
V-Band Flip-Chip Assembled Gain Block Using In(0.6)Ga(0.4)As Metamorphic High-Electron-Mobility Transistor Technology
|
Chiang, Che-Yang; Hsu, Heng-Tung; Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Shou; Chang, Edward Yi |
