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"hsu heng tung"的相关文件
显示项目 1-50 / 83 (共2页)
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| 臺大學術典藏 |
2021-09-17T07:57:39Z |
An Automatic Platform Based on Nanostructured Microfluidic Chip for Isolating and Identification of Circulating Tumor Cells
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Jou, Hei-Jen; Chou, Li-Yun; WEN-CHUN CHANG; Ho, Hsin-Cheng; Zhang, Wan-Ting; Ling, Pei-Ying; Tsai, Ko-Hsin; Chen, Szu-Hua; Chen, Tze-Ho; Lo, Pei-Hsuan; MING CHEN; Hsu, Heng-Tung |
| 臺大學術典藏 |
2021-07-15T05:32:33Z |
An automatic platform based on nanostructured microfluidic chip for isolating and identification of circulating tumor cells
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Jou, Hei Jen; Chou, Li Yun; WEN-CHUN CHANG; Ho, Hsin Cheng; Zhang, Wan Ting; Ling, Pei Ying; Tsai, Ko Hsin; Chen, Szu Hua; Chen, Tze Ho; Lo, Pei Hsuan; MING CHEN; Hsu, Heng Tung |
| 國立交通大學 |
2020-07-01T05:22:07Z |
Novel Low-Cost Power Divider for 5.8 GHz
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Chang, Tso-Jung; Pande, Krishna; Hsu, Heng-Tung |
| 國立交通大學 |
2020-07-01T05:21:15Z |
Enhancement of electron transport properties of InAlGaN/AlN/GaN HEMTs on silicon substrate with GaN insertion layer
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Kao, Min-Lu; Ha, Minh Thien Huu; Lin, Yuan; Weng, You-Chen; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2020-05-05T00:02:24Z |
Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band Applications
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Lee, P. H.; Lai, K. H.; Huang, T. J.; Chang, Edward Y.; Hsu, Heng-Tung; Lin, Y. C.; Chen, S. H. |
| 國立交通大學 |
2020-05-05T00:01:58Z |
Planar Diplexer Design Using Hairpin Resonators Loaded with External Capacitors for Improvement of Isolation and Stopband Rejection Levels
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Wu, Chia-Wei; Hsu, Heng-Tung; Tsao, Yi-Fan; Huang, Ting-Jui |
| 國立交通大學 |
2020-05-05T00:01:32Z |
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
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Chang, Edward Yi; Chien, Chao Hsin; Iwai, Hiroshi; Tsutsui, Kazuo; Kakushima, Kuniyuki; Nagarajan, Venkatesan; Hsu, Heng-Tung; Yao, Jing Neng; Wu, Chia-Hsun; Lee, Jin Hwa; Hsu, Chia Chieh; Lin, Yueh-Chin; Lin, Jia-Ching; Huang, Kuan Ning |
| 國立交通大學 |
2020-05-05T00:01:25Z |
Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks
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Hsu, Heng-Tung; Tsao, Yi-Fan; Wuerfl, Joachim |
| 國立交通大學 |
2019-08-02T02:18:36Z |
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
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Yao, Jing Neng; Lin, Yueh Chin; Lin, Min Song; Huang, Ting Jui; Hsu, Heng Tung; Sze, Simon M.; Chang, Edward Y. |
| 國立交通大學 |
2019-08-02T02:18:27Z |
Communication-Potential of the pi-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Wong, Ying-Chieh; Huang, Ting-Jui; Hsu, Heng-Tung; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-03T06:47:53Z |
Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices
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Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:37Z |
A Compact Dual-band Antenna at Ka-band Frequencies for Next Generation Cellular Applications
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Huang, Ting-Jui; Hsu, Heng-Tung; Chou, Hsi-Tseng |
| 國立交通大學 |
2019-04-02T06:04:29Z |
An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
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Wang, Chin-Te; Kuo, Chien-, I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2019-04-02T06:04:22Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Chang, Chia-Yuan; Chang, Edward Yi; Huang, Wei-Ching; Su, Yung-Hsuan; Trinh, Hai-Dang; Hsu, Heng-Tung; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T06:04:20Z |
Single-pole Double-throw Switch Using Stacked-FET Configuration at Millimeter Wave Frequencies
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Mei, Peng-, I; Wu, Guan-Wei; Hsu, Heng-Shou; Huang, Ting-Jui; Tsao, Yi-Fan; Chiang, Che-Yang; Hsu, Heng-Tung |
| 國立交通大學 |
2019-04-02T06:04:20Z |
Effect of AlN Spacer on the AlGaN/GaN HEMT Device Performance at Millimeter-wave Frequencies
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Wang, Chun; Hsu, Heng-Tung; Huang, Ting-Jui; Fan, Jun-Kai; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:01:05Z |
Metamorphic In0.53Ga0.47As Metal-Oxide-Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics
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Ku, Chien-I; Chang, Edward Yi; Hsu, Heng-Tung; Chen, Chun-Chi; Chang, Chia-Yuan |
| 國立交通大學 |
2019-04-02T06:00:51Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
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Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:39Z |
V-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technology
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Chiang, Che-Yang; Hsu, Heng-Tung; Wang, Chin-Te; Kuo, Chien-I; Hsu, Heng-Shou; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:59:36Z |
Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic Applications
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Yao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T05:58:44Z |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki |
| 國立交通大學 |
2019-04-02T05:58:17Z |
RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications
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Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra |
| 國立交通大學 |
2018-08-21T05:57:06Z |
Miniaturized Wilkinson Power Divider with Complex Isolation Network for Physical Isolation
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Chang, Tso-Jung; Huang, Ting-Jui; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:57:04Z |
Ka-band Antipodal Dual Exponentially Tapered Slot Antenna for Next Generation Mobile Communication System Applications
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Hsu, Heng-Tung; Huang, Ting-Jui; Tsao, Yi-Fang |
| 國立交通大學 |
2018-08-21T05:56:46Z |
A New Design of Wilkinson Power Divider Using Radial Stubs Featuring Size Reduction and Bandwidth Enhancement with Physical Isolation
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Chang, Tso-Jung; Huang, Ting-Jui; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:54:09Z |
Reliability improvement in GaN HEMT power device using a field plate approach
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Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2018-08-21T05:54:04Z |
High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications
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Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:54Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2018-08-21T05:53:05Z |
Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication
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Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:17Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:16Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
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Tsai, Szu-Ping; Hsu, Heng-Tung; Wuerfl, Joachim; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:59Z |
30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT
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Rasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
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Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling Technique
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Hsu, Heng-Tung; Chang, Chia-Yuan; Hsu, Heng-Shou; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:11Z |
High Perfonnance InAs-Channel HEMT for Low Voltage Milimeter Waive Applications
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Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Ku, Chien-, I; Miyamoto, Yasuyuki |
| 國立交通大學 |
2017-04-21T06:48:56Z |
On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology
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Hsu, Heng-Tung; Kuo, Chien-, I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
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CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T11:20:38Z |
Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
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Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Y. |
| 國立交通大學 |
2015-07-21T08:29:41Z |
Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics
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Tsai, Szu-Ping; Hsu, Heng-Tung; Tu, Yung-Yi; Chang, Edward Yi |
| 國立成功大學 |
2015-03 |
Terahertz Negative Refraction in a High-Temperature Superconducting Material
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Wu, Meng-Ru; Hsu, Heng-Tung; Wu, Chien-Jang; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-16T06:15:24Z |
High Electron Mobility Transistor and Method for Fabricating the Same
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Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-16T06:15:14Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
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CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:15:04Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
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CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:14:14Z |
High electron mobility transistor and method for fabricating the same
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Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
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