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机构 日期 题名 作者
國立交通大學 2019-04-02T05:58:44Z InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Trinh, Hai-Dang; Miyamoto, Yasuyuki
國立交通大學 2019-04-02T05:58:17Z RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1-xAs)(m)/(InAs)(n) Superlattice-Channel Structure for Millimeter-Wave Applications Kuo, Chien-I; Hsu, Heng-Tung; Chen, Yu-Lin; Wu, Chien-Ying; Chang, Edward Yi; Miyamoto, Yasuyuki; Tsern, Wen-Chung; Sahoo, Kartik Chandra
國立交通大學 2018-08-21T05:57:06Z Miniaturized Wilkinson Power Divider with Complex Isolation Network for Physical Isolation Chang, Tso-Jung; Huang, Ting-Jui; Hsu, Heng-Tung
國立交通大學 2018-08-21T05:57:04Z Ka-band Antipodal Dual Exponentially Tapered Slot Antenna for Next Generation Mobile Communication System Applications Hsu, Heng-Tung; Huang, Ting-Jui; Tsao, Yi-Fang
國立交通大學 2018-08-21T05:56:46Z A New Design of Wilkinson Power Divider Using Radial Stubs Featuring Size Reduction and Bandwidth Enhancement with Physical Isolation Chang, Tso-Jung; Huang, Ting-Jui; Hsu, Heng-Tung
國立交通大學 2018-08-21T05:54:09Z Reliability improvement in GaN HEMT power device using a field plate approach Wu, Wen-Hao; Lin, Yueh-Chin; Chin, Ping-Chieh; Hsu, Chia-Chieh; Lee, Jin-Hwa; Liu, Shih-Chien; Maa, Jer-Shen; Iwai, Hiroshi; Chang, Edward Yi; Hsu, Heng-Tung
國立交通大學 2018-08-21T05:54:04Z High-Performance GaN MOSHEMTs Fabricated With ALD Al2O3 Dielectric and NBE Gate Recess Technology for High Frequency Power Applications Lin, Yen-Ku; Noda, Shuichi; Huang, Chia-Ching; Lo, Hsiao-Chieh; Wu, Chia-Hsun; Quang Ho Luc; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:54Z Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi
國立交通大學 2018-08-21T05:53:05Z Improved Linearity in AlGaN/GaN HEMTs for Millimeter-Wave Applications by Using Dual-Gate Fabrication Wang, Huan-Chung; Su, Huan-Fu; Luc, Quang-Ho; Lee, Ching-Ting; Hsu, Heng-Tung; Chang, Edward Yi
國立交通大學 2017-04-21T06:56:17Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:56:07Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016) Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:58Z AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:41Z A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi
國立交通大學 2017-04-21T06:55:16Z Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design Tsai, Szu-Ping; Hsu, Heng-Tung; Wuerfl, Joachim; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:59Z 30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT Rasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:23Z The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:11Z Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling Technique Hsu, Heng-Tung; Chang, Chia-Yuan; Hsu, Heng-Shou; Chang, Edward Yi
國立交通大學 2017-04-21T06:49:11Z High Perfonnance InAs-Channel HEMT for Low Voltage Milimeter Waive Applications Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Ku, Chien-, I; Miyamoto, Yasuyuki
國立交通大學 2017-04-21T06:48:56Z On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology Hsu, Heng-Tung; Kuo, Chien-, I; Chang, Edward Yi
國立交通大學 2017-04-21T06:48:55Z Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi
國立交通大學 2016-03-28T00:04:14Z Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi
國立交通大學 2015-12-04T07:03:12Z GATE STRUCTURE CHANG Yi; KUO Chien-I; HSU Heng-Tung
國立交通大學 2015-12-02T02:59:20Z Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung
國立交通大學 2015-07-21T11:20:38Z Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Y.
國立交通大學 2015-07-21T08:29:41Z Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics Tsai, Szu-Ping; Hsu, Heng-Tung; Tu, Yung-Yi; Chang, Edward Yi

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