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Taiwan Academic Institutional Repository >
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"hsu heng tung"
Showing items 31-55 of 83 (4 Page(s) Totally)
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| 國立交通大學 |
2017-04-21T06:56:07Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications (vol 37, pg 1395, 2016)
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:58Z |
AlGaN/GaN HEMTs With Damage-Free Neutral Beam Etched Gate Recess for High-Performance Millimeter-Wave Applications
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Lin, Yen-Ku; Noda, Shuichi; Lo, Hsiao-Chieh; Liu, Shih-Chien; Wu, Chia-Hsun; Wong, Yuen-Yee; Luc, Quang Ho; Chang, Po-Chun; Hsu, Heng-Tung; Samukawa, Seiji; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:41Z |
A 60-nm-thick enhancement mode In0.65Ga0.35As/InAs/In0.65Ga0.35As high-electron-mobility transistor fabricated using Au/Pt/Ti non-annealed ohmic technology for low-power logic applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Liu, Ren-Xuan; Yang, Kai-Chun; Lin, Tai-We; Hsu, Heng-Tung; Yang, Jung-Hsiang; Miyamoto, Yasuyuki; Iwai, Hiroshi; Hu, Chenming Calvin; Salahuddin, Sayeef; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:55:16Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design
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Tsai, Szu-Ping; Hsu, Heng-Tung; Wuerfl, Joachim; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:59Z |
30 GHz 2-Stage MMIC Low Noise Amplifier using GaAs Pseudomorphic HEMT
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Rasmi, Amiza; Azmi, I. M.; Rahim, A. I. A.; Hsu, Heng-Tung; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:23Z |
The Effect of Surface Passivation on the Electrical Performance of AlG aN/GaNHEMTs with Slant Field Plates
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Hsu, Heng-Tung; Lin, Yueh-Chin; Huang, Lu-Che; Chang, Chia-Hua; Hsieh, Ting-En; Itoh, Yasushi; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:11Z |
Accurate Performance Evaluation of HEMT Devices for High-Speed Logic Applications through Rigorous Device Modelling Technique
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Hsu, Heng-Tung; Chang, Chia-Yuan; Hsu, Heng-Shou; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:49:11Z |
High Perfonnance InAs-Channel HEMT for Low Voltage Milimeter Waive Applications
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Hsu, Heng-Tung; Chang, Chia-Yuan; Chang, Edward Yi; Ku, Chien-, I; Miyamoto, Yasuyuki |
| 國立交通大學 |
2017-04-21T06:48:56Z |
On the Noise Performance of 80nm InAs/In0.7Ga0.3As HEMTs Using Gate Sinking Technology
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Hsu, Heng-Tung; Kuo, Chien-, I; Chang, Edward Yi |
| 國立交通大學 |
2017-04-21T06:48:55Z |
Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric
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Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi |
| 國立交通大學 |
2016-03-28T00:04:14Z |
Potential of Enhancement Mode In0.65Ga0.35As/InAs/In0.65Ga0.35As HEMTs for Using in High-Speed and Low-Power Logic Applications
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Fatah, Faiz Aizad; Lin, Yueh-Chin; Lee, Tsung-Yun; Yang, Kai-Chun; Liu, Ren-Xuan; Chan, Jing-Ray; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi |
| 國立交通大學 |
2015-12-04T07:03:12Z |
GATE STRUCTURE
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CHANG Yi; KUO Chien-I; HSU Heng-Tung |
| 國立交通大學 |
2015-12-02T02:59:20Z |
Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors
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Huang, Wei-Ching; Liu, Kuan-Shin; Wong, Yuen-Yee; Hsieh, Chi-Feng; Chang, Edward-Yi; Hsu, Heng-Tung |
| 國立交通大學 |
2015-07-21T11:20:38Z |
Monolithic wideband linear power amplifier with 45% power bandwidth using pseudomorphic high-electron-mobility transistors for long-term evolution application
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Chiang, Che-Yang; Hsu, Heng-Tung; Chang, Edward Y. |
| 國立交通大學 |
2015-07-21T08:29:41Z |
Investigation of electrical and thermal properties of multiple AlGaN/GaN high-electron-mobility transistors flip-chip packaged in parallel for power electronics
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Tsai, Szu-Ping; Hsu, Heng-Tung; Tu, Yung-Yi; Chang, Edward Yi |
| 國立成功大學 |
2015-03 |
Terahertz Negative Refraction in a High-Temperature Superconducting Material
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Wu, Meng-Ru; Hsu, Heng-Tung; Wu, Chien-Jang; Chang, Shoou-Jinn |
| 國立交通大學 |
2014-12-16T06:15:24Z |
High Electron Mobility Transistor and Method for Fabricating the Same
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Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-16T06:15:14Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
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CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:15:04Z |
DEVICE HAVING SERIES-CONNECTED HIGH ELECTRON MOBILITY TRANSISTORS AND MANUFACTURING METHOD THEREOF
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CHANG EDWARD YI; HSU HENG-TUNG |
| 國立交通大學 |
2014-12-16T06:14:14Z |
High electron mobility transistor and method for fabricating the same
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Chang Edward Yi; Kuo Chien-I; Hsu Heng-Tung |
| 國立交通大學 |
2014-12-08T15:47:54Z |
Improvement on the noise performance of InAs-based HEMTs with gate sinking technology
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Hsu, Heng-Tung; Kuo, Chien-I; Chang, Edward Y.; Kuo, Fang-Yao |
| 國立交通大學 |
2014-12-08T15:40:50Z |
InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
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Chang, Chia-Yuan; Hsu, Heng-Tung; Chang, Edward Yi; Miyamoto, Yasuyuki |
| 國立交通大學 |
2014-12-08T15:38:24Z |
Improvement in RF performance of 40-nm InAs-channel based HEMTs using Pt gate sinking with two-step recess processes technology
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Kuo, Chien-I; Hsu, Heng-Tung; Wu, Chien-Ying; Chang, Edward Y.; Chen, Yu-Lin; Lim, Wee-Chin |
| 國立交通大學 |
2014-12-08T15:37:07Z |
An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
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Wang, Chin-Te; Kuo, Chien-I; Lim, Wee-Chin; Hsu, Li-Han; Hsu, Heng-Tung; Miyamoto, Yasuyuki; Chang, Edward Yi; Tsai, Szu-Ping; Chiu, Yu-Sheng |
| 國立交通大學 |
2014-12-08T15:36:34Z |
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
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Tsai, Szu-Ping; Hsu, Heng-Tung; Chiang, Che-Yang; Tu, Yung-Yi; Chang, Chia-Hua; Hsieh, Ting-En; Wang, Huan-Chung; Liu, Shih-Chien; Chang, Edward Yi |
Showing items 31-55 of 83 (4 Page(s) Totally)
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