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"hsu rong tay"的相关文件
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| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
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Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
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Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2004-01 |
Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
| 國立成功大學 |
2003-11 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan |
| 國立成功大學 |
2003-07 |
Low dark current InGaAs(P)/InP p-i-n photodiodes
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
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