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"hsu sheng chia"
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| 國立交通大學 |
2017-04-21T06:49:47Z |
Experimentally Effective Clean Process to C-V Characteristic Variation Reduction of HKMG MOS Devices
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Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
| 國立交通大學 |
2015-11-26T00:55:22Z |
本質參數擾動對於低操作電壓塊材鰭式場效應電晶體元件特性與電路功率消耗變異之研究
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許勝嘉; Hsu, Sheng-Chia; 李義明; Li, Yiming |
| 國立交通大學 |
2015-07-21T11:20:49Z |
Electrical characteristic fluctuation of 16-nm-gate high-kappa/metal gate bulk FinFET devices in the presence of random interface traps
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Hsu, Sheng-Chia; Li, Yiming |
| 國立交通大學 |
2015-07-21T08:31:31Z |
On Characteristic Variability of 16-nm-Gate Bulk FinFET Devices Induced by Intrinsic Parameter Fluctuation and Process Variation Effect
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Chen, Chieh-Yang; Li, Yiming; Chen, Yu-Yu; Chang, Han-Tung; Hsu, Sheng-Chia; Huang, Wen-Tsung; Yang, Chin-Min; Chen, Li-Wen |
| 國立交通大學 |
2015-07-21T08:31:29Z |
Statistical Device Simulation of Intrinsic Parameter Fluctuation in 16-nm-Gate N- and P-type Bulk FinFETs
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Chen, Yu-Yu; Huang, Wen-Tsung; Hsu, Sheng-Chia; Chang, Han-Tung; Chen, Chieh-Yang; Yang, Chin-Min; Chen, Li-Wen; Li, Yiming |
| 國立交通大學 |
2014-12-08T15:31:00Z |
The intrinsic parameter fluctuation on high-kappa/metal gate bulk FinFET devices
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Li, Yiming; Su, Hsin-Wen; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung |
| 國立交通大學 |
2014-12-08T15:31:00Z |
Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
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Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
| 國立成功大學 |
2013-09 |
Mobility model extraction for surface roughness of SiGe along (110) and (100) Orientations in HKMG bulk FinFET devices
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Chen, Chien-Hung; Li, Yiming; Chen, Chieh-Yang; Chen, Yu-Yu; Hsu, Sheng-Chia; Huang, Wen-Tsung; Chu, Sheng-Yuan |
Showing items 1-8 of 8 (1 Page(s) Totally)
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