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機構 日期 題名 作者
國立交通大學 2014-12-08T15:18:57Z Reliability of strained SiGe channel p-channel metal-oxide-semiconductor field-effect transistors with ultra-thin (EOT=3.1nm) N(2)O-annealed SiN gate dielectric Chen, CW; Chien, CH; Chen, YC; Hsu, SL; Chang, CY
國立交通大學 2014-12-08T15:18:53Z Impact of post-deposition-annealing on the electrical characteristics of HfOxNy gate dielectric on Ge substrate Cheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, MY; Huang, CC; Yang, FL; Chang, CY
國立交通大學 2014-12-08T15:18:52Z Study of thermal stability of nickel monogermanide on single- and polycrystalline germanium substrates Hsu, SL; Chien, CH; Yang, MJ; Huang, RH; Leu, CC; Shen, SW; Yang, TH
國立交通大學 2014-12-08T15:18:08Z Enhanced luminance and thermal properties of poly(phenylenevinylene) copolymer presenting side-chain-tethered silsesquioxane units Chou, CH; Hsu, SL; Yeh, SW; Wang, HS; Wei, KH
國立交通大學 2014-12-08T15:18:03Z Suppressing phosphorus diffusion in germanium by carbon incorporation Luo, G; Cheng, CC; Huang, CY; Hsu, SL; Chien, CH; Ni, WX; Chang, CY
國立交通大學 2014-12-08T15:17:42Z Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substrates Cheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, CH; Chang, CY
國立交通大學 2014-12-08T15:05:06Z DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES HSU, SL; LIU, LM; LIN, MS; CHANG, CY
國立交通大學 2014-12-08T15:04:41Z FIELD INVERSION GENERATED IN THE CMOS DOUBLE-METAL PROCESS DUE TO PETEOS AND SOG INTERACTIONS HSU, SL; LIU, LM; FANG, CH; YING, SL; CHEN, TL; LIN, MS; CHANG, CY
臺北醫學大學 2014 Gallic acid selectively induces the necrosis of activated hepatic stellate cells via a calcium-dependent calpain I activation pathway Hsieh, SC;Wu, CH;Wu, CC;Yen, JH;Liu, MC;Hsueh, CM;Hsu, SL
國立暨南國際大學 2013 Interleukin-6 upregulates paraoxonase 1 gene expression via an AKT/NF-kappa B-dependent pathway 徐士蘭; Hsu, SL

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