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Showing items 621-630 of 652  (66 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 2006 Improvements of uniformity and stoichiometry for zone-leveling Czochralski growth of MgO-doped LiNbO3 crystals Tsai, C.B.; Hsu, W.T.; Shih, M.D.; Tai, C.Y.; Hsieh, C.K.; Hsu, W.C.; Hsu, R.T.; Lan, C.W.
臺大學術典藏 2006 Region monitoring for local phase detection in dynamic optimization systems Das, A.; Lu, J.; Hsu, W.-C.; WEI-CHUNG HSU
臺大學術典藏 2006 Tongue teratoma - A rare form of fetal extragonadal teratoma diagnosed at 30 weeks' gestation [3] Chiang Y.-C.; Shih J.-C.; STEVEN SHINN-FORNG PENG; Hsu W.-C.; Lee C.-N.
國立東華大學 2005-08 Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H.
國立成功大學 2005-01 A performance study of PEMS applied to the Hsinta power station of Taipower Chien, T. W.; Chu, Hsin; Hsu, W. C.; Tu, Y. Y.; Tsai, H. S.; Chen, K. Y.
國立東華大學 2005 Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J.
國立東華大學 2005 High-temperature thermal stability performance in delta-doped In0.425Al0.575As/In0.65Ga0.35As metamorphic HEMT Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J.
國立東華大學 2005 InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations Lin,Y. S.; Hsu,R. T.; Wu,Y. H.; Chen,Y. J.; Chen,Y. W.; Hsu,W. C.
國立東華大學 2005 Improved InP/InGaAs double heterojunction bipolar transistor Lin,Y. S.; Hsu,W. C.; Chen,Y. J.; Huang,D. H.; Wang, T. B.; Huang,J. H.
國立臺灣大學 2005 Zone-levelling Czochralski growth of MgO-doped near-stoichiometric lithium niobate single crystals Tsai, C.B.; Hsia, Y.T.; Shih, M.D.; Tai, C.Y.; Hsieh, C.K.; Hsu, W.C.; Lan, C.W.

Showing items 621-630 of 652  (66 Page(s) Totally)
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