|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"hsu wei chou"
Showing items 61-85 of 137 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
| 國立成功大學 |
2008-08 |
A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer
|
Yu, Shu-Jenn; Huang, Hui-Min; Lee, Ching-Sung; Wu, Chang-Luen; Hsu, Wei-Chou |
| 國立成功大學 |
2008-04 |
Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2008-04 |
Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metarnorphic high electron mobility transistors
|
Lee, Ching-Sung; Chian, Chia-Jeng; Hsu, Wei-Chou; Su, Ke-Hua; Yu, Su-Jen |
| 國立成功大學 |
2008-01-29 |
Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode
|
Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks
|
Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-10 |
Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor
|
Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Jun-Chin |
| 國立成功大學 |
2007-07 |
A Ku-band three-stage MMIC low-noise amplifier with superiorly low thermal-sensitivity coefficients
|
Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-07 |
A metamorphic heterostructure field-effect transistor with a double delta-doped channel
|
Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Yeh, Jung-Han; Huang, Jun-Chin |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007-06 |
Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hal; Huang, Ming-Feng |
| 國立成功大學 |
2007-05-21 |
Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N-2 atmospheres
|
Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-04 |
Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007-03-26 |
Low threshold current density, highly strained InGaAs laser grown by MOC-ND
|
Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Chiou, Chih-Hung |
| 國立成功大學 |
2007-02-26 |
delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition
|
Lin, Y. S.; Huang, D. H.; Chen, Yen-Wei; Huang, J. C.; Hsu, Wei-Chou |
| 國立成功大學 |
2007-02 |
A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
|
Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
|
Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2007 |
Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm
|
Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, I. Liang; Lee, Tsin-Dong; Su, Ke-Hua; Yang, Hung-Pin D.; Chiou, Chih-Hung |
| 國立成功大學 |
2007 |
High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng |
| 國立成功大學 |
2007 |
Improved hydrogen-sensing properties of a Pt/SiO2/GaN Schottky diode
|
Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hung, Chin-Wen; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT
|
Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai |
| 國立成功大學 |
2006-09-15 |
Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells
|
Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou |
| 國立成功大學 |
2006-09-12 |
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes
|
Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma
|
Wang, Tzong-Bin; Hsu, Wei-Chou; Che, Yen-Wei; Chen, Yeong-Jia |
| 國立成功大學 |
2006-07 |
Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mu m
|
Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Su, Ke-Hua; Chiou, Chih-Hung; Lin, Gray |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
|
Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
Showing items 61-85 of 137 (6 Page(s) Totally) << < 1 2 3 4 5 6 > >> View [10|25|50] records per page
|