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Showing items 71-95 of 137  (6 Page(s) Totally)
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Institution Date Title Author
國立成功大學 2007-05-21 Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N-2 atmospheres Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau
國立成功大學 2007-04 Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei
國立成功大學 2007-03-26 Low threshold current density, highly strained InGaAs laser grown by MOC-ND Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Chiou, Chih-Hung
國立成功大學 2007-02-26 delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition Lin, Y. S.; Huang, D. H.; Chen, Yen-Wei; Huang, J. C.; Hsu, Wei-Chou
國立成功大學 2007-02 A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei
國立成功大學 2007 Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua
國立成功大學 2007 Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, I. Liang; Lee, Tsin-Dong; Su, Ke-Hua; Yang, Hung-Pin D.; Chiou, Chih-Hung
國立成功大學 2007 High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng
國立成功大學 2007 Improved hydrogen-sensing properties of a Pt/SiO2/GaN Schottky diode Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hung, Chin-Wen; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau
國立成功大學 2006-12 Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai
國立成功大學 2006-09-15 Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou
國立成功大學 2006-09-12 Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau
國立成功大學 2006-09 Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma Wang, Tzong-Bin; Hsu, Wei-Chou; Che, Yen-Wei; Chen, Yeong-Jia
國立成功大學 2006-07 Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mu m Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Su, Ke-Hua; Chiou, Chih-Hung; Lin, Gray
國立成功大學 2006-06 Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai
國立成功大學 2006-05-29 High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2006-05 Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng
國立成功大學 2006-04 Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia
國立成功大學 2006-04 Improved InAlGaP-based heterostructure field-effect transistors Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa
國立成功大學 2006-03 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B.
國立成功大學 2006-03 Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen
國立成功大學 2006-02 Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser Chen, I-Liang; Hsu, Wei-Chou; Kuo, Hao-Chung; Sung, Chia-Pin; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang; Yu, Hsin-Chieh; Lee, Tsin-Dong
國立成功大學 2006-02 High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT Yu, Shu-Jenn; Hsu, Wei-Chou; Chen, Yeong-Jia; Wu, Chang-Luen
國立成功大學 2006-01 Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Kuo, Hao-Chung; Su, Ke-Hua; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang
國立成功大學 2006 Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen

Showing items 71-95 of 137  (6 Page(s) Totally)
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