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Taiwan Academic Institutional Repository >
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"hsu wei chou"
Showing items 91-115 of 137 (6 Page(s) Totally)
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| 國立成功大學 |
2006-03 |
Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT
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Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006-02 |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
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Chen, I-Liang; Hsu, Wei-Chou; Kuo, Hao-Chung; Sung, Chia-Pin; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang; Yu, Hsin-Chieh; Lee, Tsin-Dong |
| 國立成功大學 |
2006-02 |
High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
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Yu, Shu-Jenn; Hsu, Wei-Chou; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2006-01 |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Kuo, Hao-Chung; Su, Ke-Hua; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang |
| 國立成功大學 |
2006 |
Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2006 |
Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures
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Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia |
| 國立成功大學 |
2005-10 |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, I-Liang; Wang, Jyh-Shyang; Lee, Tsin-Dong; Chang, Yu-Hsiang; Wang, Jin-Mei; Chiou, Chih-Hung; Lu, Chen-Ming; Sung, Chia-Pin; Yu, Hsin-Chieh; Kuo, Hao-Chung; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08-22 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor (vol 86, art no 033505, 2005)
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Lee, C. S.; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
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Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
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Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
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Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-12 |
Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET
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Lee, C. S.; Yang, W. L.; Chen, H. H.; Hsu, Wei-Chou; Chen, Y. J.; Huang, J. C. |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
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Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
| 國立成功大學 |
2004-09 |
Improved step-graded-channel heterostructure field-effect transistor
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Yu, Shu-Jenn; Hsu, Wei-Chou; Li, Yih-Juan; Chen, Yeong-Jia |
| 國立成功大學 |
2004-06 |
Characteristics of spike-free single and double heterostructure-emitter bipolar transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou |
| 國立成功大學 |
2004-05-03 |
Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
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Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2004-01 |
Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels
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Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
Showing items 91-115 of 137 (6 Page(s) Totally)
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