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机构 日期 题名 作者
國立成功大學 2006-09-15 Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou
國立成功大學 2006-09-12 Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau
國立成功大學 2006-09 Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma Wang, Tzong-Bin; Hsu, Wei-Chou; Che, Yen-Wei; Chen, Yeong-Jia
國立成功大學 2006-07 Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mu m Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Su, Ke-Hua; Chiou, Chih-Hung; Lin, Gray
國立成功大學 2006-06 Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai
國立成功大學 2006-05-29 High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2006-05 Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng
國立成功大學 2006-04 Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia
國立成功大學 2006-04 Improved InAlGaP-based heterostructure field-effect transistors Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa
國立成功大學 2006-03 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B.

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