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显示项目 96-120 / 137 (共6页)
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机构 日期 题名 作者
國立成功大學 2006 n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei
國立成功大學 2006 Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen
國立成功大學 2005-12 Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung
國立成功大學 2005-12 Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia
國立成功大學 2005-10 Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition Chen, I-Liang; Wang, Jyh-Shyang; Lee, Tsin-Dong; Chang, Yu-Hsiang; Wang, Jin-Mei; Chiou, Chih-Hung; Lu, Chen-Ming; Sung, Chia-Pin; Yu, Hsin-Chieh; Kuo, Hao-Chung; Hsu, Wei-Chou
國立成功大學 2005-08-22 Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor (vol 86, art no 033505, 2005) Lee, C. S.; Hsu, Wei-Chou
國立成功大學 2005-08 Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen
國立成功大學 2005-06 Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L.
國立成功大學 2005-02 Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung
國立成功大學 2005-02 High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen
國立成功大學 2005-02 InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei
國立成功大學 2005-01-17 Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor Lee, Ching-Sung; Hsu, Wei-Chou
國立成功大學 2004-12 Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET Lee, C. S.; Yang, W. L.; Chen, H. H.; Hsu, Wei-Chou; Chen, Y. J.; Huang, J. C.
國立成功大學 2004-11-22 Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2004-09 Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai
國立成功大學 2004-09 Improved step-graded-channel heterostructure field-effect transistor Yu, Shu-Jenn; Hsu, Wei-Chou; Li, Yih-Juan; Chen, Yeong-Jia
國立成功大學 2004-06 Characteristics of spike-free single and double heterostructure-emitter bipolar transistors Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou
國立成功大學 2004-05-03 Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor Lee, Ching-Sung; Hsu, Wei-Chou
國立成功大學 2004-05 Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan
國立成功大學 2004-01 Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia
國立成功大學 2003-11 Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan
國立成功大學 2003-08 A feasibility study on the predictive emission monitoring system applied to the Hsinta power plant of Taiwan power company Chien, T. W.; Chu, Hsin; Hsu, Wei-Chou; Tseng, T. K.; Hsu, C. H.; Chen, K. Y.
國立成功大學 2003-07 Low dark current InGaAs(P)/InP p-i-n photodiodes Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia
國立成功大學 2003-07 Off-state breakdown modeling for high-Schottky-barrier delta-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor Lee, Ching-Sung; Hsu, Wei-Chou
國立成功大學 2003-05-31 Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser Chen, I.-Liang; Hsu, Wei-Chou; Lu, Chen-Ming; Chiou, Chih-Hung; Lee, Zheng-Hong; Lee, Tsin-Dong

显示项目 96-120 / 137 (共6页)
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