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"hsu wei chou"的相關文件
顯示項目 101-110 / 137 (共14頁)
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| 國立成功大學 |
2005-08-22 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor (vol 86, art no 033505, 2005)
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Lee, C. S.; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
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Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
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Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
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Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-12 |
Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET
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Lee, C. S.; Yang, W. L.; Chen, H. H.; Hsu, Wei-Chou; Chen, Y. J.; Huang, J. C. |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
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Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
顯示項目 101-110 / 137 (共14頁)
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