| 國立成功大學 |
2005-08-22 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor (vol 86, art no 033505, 2005)
|
Lee, C. S.; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
|
Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
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Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
|
Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-12 |
Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET
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Lee, C. S.; Yang, W. L.; Chen, H. H.; Hsu, Wei-Chou; Chen, Y. J.; Huang, J. C. |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
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Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
|
Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
| 國立成功大學 |
2004-09 |
Improved step-graded-channel heterostructure field-effect transistor
|
Yu, Shu-Jenn; Hsu, Wei-Chou; Li, Yih-Juan; Chen, Yeong-Jia |
| 國立成功大學 |
2004-06 |
Characteristics of spike-free single and double heterostructure-emitter bipolar transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Jong, Fuh-Cheng; Chiou, Yu-Zung; Chen, Yeong-Jia; Tang, Jing-Jou |
| 國立成功大學 |
2004-05-03 |
Double-transconductance-plateau characteristics in InGaAs/GaAs real-space transfer high-electron-mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-05 |
Enhancement-mode In0.52Al0.48As/In0.6Ga0.4As tunneling real space transfer high electron mobility transistor
|
Chen, Yen-Wei; Chen, Yeong-Jia; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Lin, Yu-Shyan |
| 國立成功大學 |
2004-01 |
Characteristics of In0.52Al0.48As/InxGa1-xAs HEMT's with various InxGa1-xAs channels
|
Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
| 國立成功大學 |
2003-11 |
Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
|
Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia; Lin, Yu-Shyan |
| 國立成功大學 |
2003-08 |
A feasibility study on the predictive emission monitoring system applied to the Hsinta power plant of Taiwan power company
|
Chien, T. W.; Chu, Hsin; Hsu, Wei-Chou; Tseng, T. K.; Hsu, C. H.; Chen, K. Y. |
| 國立成功大學 |
2003-07 |
Low dark current InGaAs(P)/InP p-i-n photodiodes
|
Chen, Yen-Wei; Hsu, Wei-Chou; Hsu, Rong-Tay; Wu, Yue-Huei; Chen, Yeong-Jia |
| 國立成功大學 |
2003-07 |
Off-state breakdown modeling for high-Schottky-barrier delta-doped In0.49Ga0.51P/In0.25Ga0.75As/InP high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-05-31 |
Characteristics of GaAs-based long-wavelength, highly strained InGaAs quantum well vertical-cavity laser
|
Chen, I.-Liang; Hsu, Wei-Chou; Lu, Chen-Ming; Chiou, Chih-Hung; Lee, Zheng-Hong; Lee, Tsin-Dong |
| 國立成功大學 |
2003-05 |
Depletion- and enhancement-mode In0.49Ga0.51P/InGaAs/AlGaAs high-electron-mobility transistors with high-breakdown voltage
|
Li, Yih-Juan; Hsu, Wei-Chou; Chen, Yen-Wei; Shieh, Hir-Ming |
| 國立成功大學 |
2003-04 |
Bias-tunable multiple-transconductance with improved transport characteristics of delta-doped In0.28Ga0.72As/GaAs/In0.24Ga0.76As/GaAs high electron mobility transistor using a graded superlattice spacer
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2003-03 |
Temperature-dependent characteristics of an Al0.2Ga0.8As/ln(0.22)Ga(0.78)As pseudomorphic double heterojunction modulation doped field-effect transistor with a GaAs/AlGaAs superlattice buffer layer
|
Li, Yih-Juan; Hsu, Wei-Chou; Wang, Sheng-Yung |
| 國立成功大學 |
2002-10 |
Analytic modeling for drain-induced barrier lowering phenomenon of the InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Wu, Chang-Luen |
| 國立成功大學 |
2002-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors (vol. 30, pg 145, 2001)
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2002-02-01 |
Characteristics of delta-doped InP heterostructures using In0.34Al0.66As0.85Sb0.15 schottky layer
|
Hsu, Wei-Chou; Lee, Ching-Sung; Lin, Yu-Shyan |
| 國立成功大學 |
2002-02 |
High breakdown characteristic 6-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT
|
Chen, Yen-Wei; Hsu, Wei-Chou; Shieh, Her-Ming; Chen, Yeong-Jia; Lin, Yu-Shyan; Li, Yih-Juan; Wang, Tzong-Bin |
| 國立成功大學 |
2001-09 |
Analytic modelling for current-voltage characteristics of InGaP/InGaAs/GaAs pseudomorphic doped-channel field-effect transistors
|
Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2001-05 |
A delta-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer
|
Lee, Ching-Sung; Hsu, Wei-Chou; Li, Sheng-San; Ho, Pin |
| 國立成功大學 |
2001-01-15 |
An improved In0.34Al0.66As0.85Sb0.15/InP heterostructure utilizing coupled delta-doping InP channel
|
Chen, Yeong-Jia; Chen, Yen-Wei; Lin, Yu-Shyan; Yeh, Chia-Yen; Li, Yih-Juan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-10-15 |
High-temperature breakdown characteristics of delta-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Chen, Yen-Wei; Chen, Yung-Cha; Shieh, Her-Ming |
| 國立成功大學 |
2000-09-01 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Shieh, Hir-Ming; Su, Jan-Shing; Jain, Shin-Yuh; Lin, Wei |
| 國立成功大學 |
2000-07 |
Investigation of a graded channel InGaAs/GaAs heterostructure transistor
|
Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-05-22 |
In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors
|
Lin, Yu-Shyan; Hsu, Wei-Chou; Yeh, Chia-Yen; Shieh, Her-Ming |
| 國立成功大學 |
1999-04-30 |
An improved heterojunction-emitter bipolar transistor using delta-doped and spacer layers
|
Lin, Y. S.; Hsu, Wei-Chou; Lu, S. Y.; Su, J. S.; Lin, W. |
| 國立成功大學 |
1998-06 |
High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer
|
Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
|
Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
