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Showing items 131-137 of 137 (6 Page(s) Totally)
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| 國立成功大學 |
2000-10-15 |
High-temperature breakdown characteristics of delta-doped In0.49Ga0.51P/GaAs/In0.25Ga0.75As/AlGaAs high electron mobility transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Chen, Yen-Wei; Chen, Yung-Cha; Shieh, Her-Ming |
| 國立成功大學 |
2000-09-01 |
A novel dual-mode In0.34Al0.66As0.85Sb0.15/In0.75Ga0.25As/InP inverted delta-doped heterostructure field-effect transistor
|
Lee, Ching-Sung; Hsu, Wei-Chou; Shieh, Hir-Ming; Su, Jan-Shing; Jain, Shin-Yuh; Lin, Wei |
| 國立成功大學 |
2000-07 |
Investigation of a graded channel InGaAs/GaAs heterostructure transistor
|
Li, Yih-Juan; Su, Jan-Shing; Lin, Yu-Shyan; Hsu, Wei-Chou |
| 國立成功大學 |
2000-05-22 |
In0.34Al0.66As0.85Sb0.15/delta(n(+))-InP heterostructure field-effect transistors
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Lin, Yu-Shyan; Hsu, Wei-Chou; Yeh, Chia-Yen; Shieh, Her-Ming |
| 國立成功大學 |
1999-04-30 |
An improved heterojunction-emitter bipolar transistor using delta-doped and spacer layers
|
Lin, Y. S.; Hsu, Wei-Chou; Lu, S. Y.; Su, J. S.; Lin, W. |
| 國立成功大學 |
1998-06 |
High-breakdown characteristics of the InP-based heterostructure field-effect transistor with In0.34Al0.66As0.85Sb0.15 Schottky layer
|
Su, Jan-Shing; Hsu, Wei-Chou; Lin, Wei; Jain, Shin-Yuh |
| 國立成功大學 |
1998-05 |
Electrical characteristics of heterostructure-emitter bipolar transistors using spacer layers
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Lin, Y. S.; Shieh, H. M.; Hsu, Wei-Chou; Su, J. S.; Huang, J. Z.; Wu, Y. H.; Ho, S. D.; Lin, W. |
Showing items 131-137 of 137 (6 Page(s) Totally)
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