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"hsu wei chou"
Showing items 61-110 of 137 (3 Page(s) Totally)
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| 國立成功大學 |
2008-08 |
A 26-38 GHz millimeter-wave band APDP sub-harmonic mixer
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Yu, Shu-Jenn; Huang, Hui-Min; Lee, Ching-Sung; Wu, Chang-Luen; Hsu, Wei-Chou |
| 國立成功大學 |
2008-04 |
Investigations on highly stable thermal characteristics of a dilute In0.2Ga0.8AsSb/GaAs doped-channel field-effect transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2008-04 |
Channel composition-dependent characteristics of delta-doped InxAl1-xAs/InyGa1-yAs metarnorphic high electron mobility transistors
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Lee, Ching-Sung; Chian, Chia-Jeng; Hsu, Wei-Chou; Su, Ke-Hua; Yu, Su-Jen |
| 國立成功大學 |
2008-01-29 |
Improved hydrogen sensing characteristics of a Pt/SiO2/GaN Schottky diode
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Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2008-01 |
A flat gain/power responses 6-18 ghz power amplifier mimic with high pae by using transformer networks
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Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-10 |
Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Jun-Chin |
| 國立成功大學 |
2007-07 |
A Ku-band three-stage MMIC low-noise amplifier with superiorly low thermal-sensitivity coefficients
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Yu, Shu-Jenn; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Chian-Sern; Wu, Chang-Luen; Chang, Ching-Hsueh |
| 國立成功大學 |
2007-07 |
A metamorphic heterostructure field-effect transistor with a double delta-doped channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Yeh, Jung-Han; Huang, Jun-Chin |
| 國立成功大學 |
2007-06 |
An improved symmetrically-graded doped-channel heterostructure field-effect transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Hu, Po-Jung; Chen, Yeong-Jia; Lee, Ching-Sung; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2007-06 |
Temperature-dependent characteristics of enhancement-/depletion-mode double delta-doped AlGaAs/InGaAs pHEMTs and their monolithic DCFL integrations
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hal; Huang, Ming-Feng |
| 國立成功大學 |
2007-05-21 |
Comparative study of hydrogen sensing characteristics of a Pd/GaN Schottky diode in air and N-2 atmospheres
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2007-04 |
Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Hu, Po-Jung; Hsia, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007-03-26 |
Low threshold current density, highly strained InGaAs laser grown by MOC-ND
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Chiou, Chih-Hung |
| 國立成功大學 |
2007-02-26 |
delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition
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Lin, Y. S.; Huang, D. H.; Chen, Yen-Wei; Huang, J. C.; Hsu, Wei-Chou |
| 國立成功大學 |
2007-02 |
A novel dilute antimony channel In0.2Ga0.8AsSb/GaAs HEMT
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Wu, Tsung-Yeh; Wu, Yue-Han; Chang, Li; Hsiao, Ru-Shang; Chen, Jenn-Fang; Chi, Tung-Wei |
| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
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Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2007 |
Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm
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Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, I. Liang; Lee, Tsin-Dong; Su, Ke-Hua; Yang, Hung-Pin D.; Chiou, Chih-Hung |
| 國立成功大學 |
2007 |
High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng |
| 國立成功大學 |
2007 |
Improved hydrogen-sensing properties of a Pt/SiO2/GaN Schottky diode
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Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hung, Chin-Wen; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai |
| 國立成功大學 |
2006-09-15 |
Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells
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Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou |
| 國立成功大學 |
2006-09-12 |
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma
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Wang, Tzong-Bin; Hsu, Wei-Chou; Che, Yen-Wei; Chen, Yeong-Jia |
| 國立成功大學 |
2006-07 |
Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mu m
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Su, Ke-Hua; Chiou, Chih-Hung; Lin, Gray |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
| 國立成功大學 |
2006-05-29 |
High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor
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Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2006-05 |
Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng |
| 國立成功大學 |
2006-04 |
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors
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Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
| 國立成功大學 |
2006-03 |
Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT
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Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006-02 |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
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Chen, I-Liang; Hsu, Wei-Chou; Kuo, Hao-Chung; Sung, Chia-Pin; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang; Yu, Hsin-Chieh; Lee, Tsin-Dong |
| 國立成功大學 |
2006-02 |
High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
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Yu, Shu-Jenn; Hsu, Wei-Chou; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2006-01 |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Kuo, Hao-Chung; Su, Ke-Hua; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang |
| 國立成功大學 |
2006 |
Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2006 |
Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures
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Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia |
| 國立成功大學 |
2005-10 |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, I-Liang; Wang, Jyh-Shyang; Lee, Tsin-Dong; Chang, Yu-Hsiang; Wang, Jin-Mei; Chiou, Chih-Hung; Lu, Chen-Ming; Sung, Chia-Pin; Yu, Hsin-Chieh; Kuo, Hao-Chung; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08-22 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor (vol 86, art no 033505, 2005)
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Lee, C. S.; Hsu, Wei-Chou |
| 國立成功大學 |
2005-08 |
Improved In0.45Al0.55As/In0.45Ga0.55As/In0.65Ga0.35As inverse composite channel metamorphic high electron mobility transistor
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Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, Yen-Wei; Su, Ke-Hua; Wu, Chang-Luen |
| 國立成功大學 |
2005-06 |
Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels
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Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L. |
| 國立成功大學 |
2005-02 |
Monolithic AlAs-InGaAs-InGaP-GaAsHRT-FETS with PVCR of 960 at 300 K
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Lee, Ching-Sung; Hsu, Wei-Chou; Huang, Jun-Chin; Chen, Yeong-Jia; Chen, Hsin-Hung |
| 國立成功大學 |
2005-02 |
High-temperature thermal stability performance in delta-doped In0.425Al0.575As-In0.65Ga0.35As metamorphic HEMT
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Hsu, Wei-Chou; Chen, Yeong-Jia; Lee, Ching-Sung; Wang, Tzong-Bin; Lin, Yu-Shyan; Wu, Chang-Luen |
| 國立成功大學 |
2005-02 |
InAlAs/InGaAs doped channel heterostructure for high-linearity, high-temperature and high-breakdown operations
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Chen, Yeong-Jia; Hsu, Wei-Chou; Chen, Yen-Wei; Lin, Yu-Shyan; Hsu, Rong-Tay; Wu, Yue-Huei |
| 國立成功大學 |
2005-01-17 |
Functional characteristics in asymmetric source/drain InAlAsSb/InGaAs/InP delta-doped high electron mobility transistor
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Lee, Ching-Sung; Hsu, Wei-Chou |
| 國立成功大學 |
2004-12 |
Analytic modeling for current-voltage characteristics and drain-induced barrier-lowering (DIBL) phenomenon of the InGaP/InGaAs/GaAs PDCFET
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Lee, C. S.; Yang, W. L.; Chen, H. H.; Hsu, Wei-Chou; Chen, Y. J.; Huang, J. C. |
| 國立成功大學 |
2004-11-22 |
Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors
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Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2004-09 |
Improved characteristics of metamorphic InAlAs/InGaAs high electron mobility transistor with symmetric graded InxGa1-xAs channel
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Li, Yih-Juan; Hsu, Wei-Chou; Chen, I-Liang; Lee, Ching-Sung; Chen, Yeong-Jia; Lo, Ikai |
Showing items 61-110 of 137 (3 Page(s) Totally)
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