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Showing items 76-100 of 137 (6 Page(s) Totally)
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| 國立成功大學 |
2007 |
Comparison of Al0.32Ga0.68N/GaN heterostructure field-effect transistors with different channel thicknesses
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Wang, Tzong-Bin; Hsu, Wei-Chou; Su, Jun-Long; Hsu, Rong-Tay; Wu, Yu-Huei; Lin, Yu-Shyan; Su, Ke-Hua |
| 國立成功大學 |
2007 |
Single-mode InGaAs photonic crystal vertical-cavity surface-emitting lasers emitting at 1170 nm
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Wang, Tzong-Bin; Hsu, Wei-Chou; Chen, I. Liang; Lee, Tsin-Dong; Su, Ke-Hua; Yang, Hung-Pin D.; Chiou, Chih-Hung |
| 國立成功大學 |
2007 |
High-power-density and high-gain delta-doped In0.425Al0.575As/In0.425Ga0.575As low-voltage for operation
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Yang, Yuan-Cheng |
| 國立成功大學 |
2007 |
Improved hydrogen-sensing properties of a Pt/SiO2/GaN Schottky diode
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Tsai, Tsung-Han; Huang, Jun-Rui; Lin, Kun-Wei; Hung, Chin-Wen; Hsu, Wei-Chou; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-12 |
Improved high-temperature characteristics of a symmetrically graded AlGaAs/InxGa1-xAs/AlGaAs pHEMT
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chang, Wei-Chen; Huang, Dong-Hai |
| 國立成功大學 |
2006-09-15 |
Magnetotransport study on the defect levels of delta-doped In0.22Ga0.78As/GaAs quantum wells
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Lo, Ikai; Lian, J. R.; Wang, H. Y.; Gau, M. H.; Tsai, J. K.; Chiang, Jih-Chen; Li, Y. J.; Hsu, Wei-Chou |
| 國立成功大學 |
2006-09-12 |
Comparison of hydrogen sensing characteristics for Pd/GaN and Pd/A1(0.3)Ga(0.7)As Schottky diodes
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Huang, Jun-Rui; Hsu, Wei-Chou; Chen, Yeong-Jia; Wang, Tzong-Bin; Lin, Kun-Wei; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-09 |
Inductively coupled plasma mesa etched InGaN/GaN light emitting diodes using Cl-2/BCl3/Ar plasma
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Wang, Tzong-Bin; Hsu, Wei-Chou; Che, Yen-Wei; Chen, Yeong-Jia |
| 國立成功大學 |
2006-07 |
Temperature-dependent characteristics and burn-in performance of GaAs-based long-wavelength vertical-cavity surface-emitting lasers emitting at 1.26 mu m
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Su, Ke-Hua; Chiou, Chih-Hung; Lin, Gray |
| 國立成功大學 |
2006-06 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Wu, Yue-Huei; Hsu, Rong-Tay; Huang, Juin-Chin; Liao, Yin-Kai |
| 國立成功大學 |
2006-05-29 |
High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor
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Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2006-05 |
Characteristics of delta-doped InAlAs/InGaAs/InP high electron mobility transistors with a linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Huang, Dong-Hai; Huang, Ming-Feng |
| 國立成功大學 |
2006-04 |
Ni/Au-Gate In0.45Al0.55As/In0.53Ga0.47As/InAlGaAs/GaAs metamorphic high-electron-mobility transistors
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Lee, Ching-Sung; Hsu, Wei-Chou; Su, Ke-Hua; Huang, Jun-Chin; Huang, Dong-Hai; Chen, Yeong-Jia |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
| 國立成功大學 |
2006-03 |
Performance improvement in tensile-strained In(0.5)A1(0.5)As/InxGa1-xAs/In(0.5)A1(0.5)As metamorphic HEMT
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Hsu, Wei-Chou; Huang, Dong-Hai; Lin, Yu-Shyan; Chen, Yeong-Jia; Huang, Jun-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006-02 |
Effect of annealing on low-threshold-current large-wavelength InGaAs quantum well vertical-cavity laser
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Chen, I-Liang; Hsu, Wei-Chou; Kuo, Hao-Chung; Sung, Chia-Pin; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang; Yu, Hsin-Chieh; Lee, Tsin-Dong |
| 國立成功大學 |
2006-02 |
High power and high breakdown delta-doped In0.35Al0.65As/In0.35Ga0.65As metamorphic HEMT
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Yu, Shu-Jenn; Hsu, Wei-Chou; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2006-01 |
Growth of highly strained RnGaAs quantum wells by metalorganic chemical vapor deposition with application to vertical-cavity surface-emitting laser
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Chen, I-Liang; Hsu, Wei-Chou; Lee, Tsin-Dong; Kuo, Hao-Chung; Su, Ke-Hua; Chiou, Chih-Hung; Wang, Jin-Mei; Chang, Yu-Hsiang |
| 國立成功大學 |
2006 |
Strain-relaxed In0.1Al0.25Ga0.65As/In0.22Ga0.78As/In0.1Al0.25Ga0.65As HEMT
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Huang, Dong-Hai; Hsu, Wei-Chou; Lin, Yu-Shyan; Huang, Juin-Chin; Wu, Chang-Luen |
| 國立成功大學 |
2006 |
n(+)-GaAs/p(+)-InAlGaP/n(+)-InAlGaP camel-gate high-electron mobility transistors
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Lin, Yu-Shyan; Huang, Dong-Hai; Hsu, Wei-Chou; Wang, Tzong-Bin; Hsu, Rong-Tay; Wu, Yu-Huei |
| 國立成功大學 |
2006 |
Comparative studies of delta-doped In0.45Al0.55As/In0.53Ga0.47As/GaAs metamorphic HEMTs with Au, Ti/Au, Ni/Au, and Pt/Au gates
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Su, Ke-Hua; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, I-Liang; Chen, Yeong-Jia; Wu, Chang-Luen |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped InAlAs/InGaAs/InP high-electron-mobility transistors with linearly graded InxGa1-xAs channel
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Huang, Jun-Chin; Hsu, Wei-Chou; Lee, Ching-Sung; Chen, Yeong-Jia; Huang, Dong-Hai; Chen, Hsin-Hung |
| 國立成功大學 |
2005-12 |
Investigations of delta-doped In0.52Al0.48As/InxGa1-xAs/InP HEMTs with different channel structures
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Lee, Ching-Sung; Chen, Hsin-Hung; Huang, Jun-Chin; Hsu, Wei-Chou; Chen, Yeong-Jia |
| 國立成功大學 |
2005-10 |
Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition
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Chen, I-Liang; Wang, Jyh-Shyang; Lee, Tsin-Dong; Chang, Yu-Hsiang; Wang, Jin-Mei; Chiou, Chih-Hung; Lu, Chen-Ming; Sung, Chia-Pin; Yu, Hsin-Chieh; Kuo, Hao-Chung; Hsu, Wei-Chou |
Showing items 76-100 of 137 (6 Page(s) Totally)
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