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Institution	Date	Title	Author
國立成功大學	2004-07	Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material	Wu, Cheng-Hsien; Su, Yan-Kuin; Chang, Shoou-Jinn; Huang, Ying-Sheng; Hsu, Ying-Sheng

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