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机构 日期 题名 作者
國立交通大學 2019-04-03T06:38:26Z Effect of rapid thermal annealing on MgxZn1-xO films prepared by radio-frequency magnetron sputtering Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung
國立成功大學 2016-11 Physical properties of Al-doped MgZnO/AlGaN p-n heterojunction photodetectors Hsueh, Kuang-Po; Chiu, Hsien-Chin; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
國立成功大學 2015 Effects of Temperature on Niobium-Doped MgZnO Films Grown Using Radio-Frequency Magnetron Sputtering Hsueh, Kuang-Po; Huang, Chao-Yung; Chiu, Hsien-Chin; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
國立交通大學 2014-12-08T15:06:39Z Effect of rapid thermal annealing on Mg(x)Zn(1-x)O films prepared by radio-frequency magnetron sputtering Hsueh, Kuang-Po; Tun, Chun-Ju; Chiu, Hsien-Chin; Huang, Yu-Ping; Chi, Gou-Chung
國立成功大學 2012-11 High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect Hsueh, Kuang-Po; Cheng, Yi-Chang; Lin, Wen-Yen; Cheng, Po-Wei; Chiu, Hsien-Chin; Wang, Hsiang-Chun; Sheu, Jinn-Kong; Yeh, Yu-Hsiang
國立成功大學 2007-07 Effects of leakage current and Schottky-like ohmic contact on the characterization of Al0.17Ga0.83N/GaN HBTs Hsueh, Kuang-Po; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju; Hsu, Chia-Hung; Lin, Bi-Hsuan
國立成功大學 2007-03-26 Temperature-dependent study of n-ZnO/p-GaN diodes Hsueh, Kuang-Po; Huang, Shou-Chien; Li, Ching-Tai; Hsin, Yue-Ming; Sheu, Jinn-Kong; Lai, Wei-Chih; Tun, Chun-Ju
國立成功大學 2006-01-15 Low Schottky barrier to etched p-GaN using regrown AlInGaN and InGaN contact layer Hsueh, Kuang-Po; Hsin, Yue-Ming; Sheu, Jinn-Kong
國立成功大學 2005-12-19 Effect of Cl-2/Ar dry etching on p-GaN with Ni/Au metallization characterization Hsueh, Kuang-Po; Hsu, Hung-Tsao; Wang, Che-Ming; Huang, Shou-Chian; Hsin, Yue-Ming; Sheu, Jinn-Kong

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