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Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
| 臺大學術典藏 |
2021-01-27T07:49:24Z |
Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA2SnI4 via Thiocyanate Passivation
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Lin, J.-T.;Hu, Y.-K.;Hou, C.-H.;Liao, C.-C.;Chuang, W.-T.;Chiu, C.-W.;Tsai, M.-K.;Shyue, J.-J.;Chou, P.-T.; Lin, J.-T.; Hu, Y.-K.; Hou, C.-H.; Liao, C.-C.; Chuang, W.-T.; Chiu, C.-W.; Tsai, M.-K.; Shyue, J.-J.; Chou, P.-T.; CHING-WEN CHIU |
| 臺大學術典藏 |
2021-01-27T07:49:24Z |
Superior Stability and Emission Quantum Yield (23% ± 3%) of Single-Layer 2D Tin Perovskite TEA2SnI4 via Thiocyanate Passivation
|
Lin, J.-T.;Hu, Y.-K.;Hou, C.-H.;Liao, C.-C.;Chuang, W.-T.;Chiu, C.-W.;Tsai, M.-K.;Shyue, J.-J.;Chou, P.-T.; Lin, J.-T.; Hu, Y.-K.; Hou, C.-H.; Liao, C.-C.; Chuang, W.-T.; Chiu, C.-W.; Tsai, M.-K.; Shyue, J.-J.; Chou, P.-T.; CHING-WEN CHIU |
| 國立成功大學 |
2020 |
The impact of ultraviolet light on the switching characteristics of NiO resistive random-access memory (ReRAM) devices
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Chuang, R.W.;Huang, M.-C.;Hu, Y.-K.;Zheng, Zheng Z.-Y. |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
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