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Taiwan Academic Institutional Repository >
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"huang ch"
Showing items 166-175 of 410 (41 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:36:47Z |
Virtual integration and profitability: some evidence from Taiwan's IC industry
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Chu, PY; Teng, MJ; Huang, CH; Lin, HS |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Layout design of high-quality SOI varactor
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Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
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Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide
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Huang, CH; Lin, CY; Li, HY; Chen, WJ; Chin, A; Mei, P |
| 國立交通大學 |
2014-12-08T15:26:10Z |
Optimized noise and consistent RF model for 0.18 mu m MOSFETs
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Huang, CH; Li, HY; Chin, A; Liang, V; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
0.13 mu m low voltage logic based RF CMOS technology with 115GHz f(T) and 80GHz f(MAX)
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Guo, JC; Huang, CH; Chan, KT; Lien, WY; Wu, CM; Sun, YC |
| 國立交通大學 |
2014-12-08T15:26:09Z |
High density RF MIM capacitors using high-kappa AlTaOx dielectrics
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Huang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:25:53Z |
Numerical approaches for solving dynamic system design problems: An application to flight level control problem
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Huang, CH; Tseng, CH |
Showing items 166-175 of 410 (41 Page(s) Totally)
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