English  |  正體中文  |  简体中文  |  总笔数 :2856704  
造访人次 :  53712793    在线人数 :  699
教育部委托研究计画      计画执行:国立台湾大学图书馆
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
关于TAIR

浏览

消息

著作权

相关连结

"huang ch"的相关文件

回到依作者浏览
依题名排序 依日期排序

显示项目 161-170 / 410 (共41页)
<< < 12 13 14 15 16 17 18 19 20 21 > >>
每页显示[10|25|50]项目

机构 日期 题名 作者
國立交通大學 2014-12-08T15:39:26Z Self-generated NAF nano template assisted formation of porous carbon nanotube arrays. Chiu, HT; Huang, CH; Chang, YH; Lee, CY; Cheng, SF; Wang, HW
國立交通大學 2014-12-08T15:39:15Z A universal calibration curve for the TSI aerodynamic particle sizer Tsai, CJ; Chen, SC; Huang, CH; Chen, DR
國立交通大學 2014-12-08T15:39:08Z Measurement of inorganic acidic gases and particles from the stack of semiconductor and optoelectronic industries Huang, CH; Ho, YT; Tsai, CJ
國立交通大學 2014-12-08T15:38:52Z Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films Huang, CH; Wang, YK; Lue, HT; Huang, JY; Lee, MZ; Tseng, TY
國立交通大學 2014-12-08T15:37:13Z Predicting the permeability and tensile behavior of high density polyethylene/tie/polyamide 6 three-layer films Huang, CH; Wu, JS; Huang, CC
國立交通大學 2014-12-08T15:36:47Z Virtual integration and profitability: some evidence from Taiwan's IC industry Chu, PY; Teng, MJ; Huang, CH; Lin, HS
國立交通大學 2014-12-08T15:26:21Z Layout design of high-quality SOI varactor Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY
國立交通大學 2014-12-08T15:26:18Z Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL
國立交通大學 2014-12-08T15:26:18Z RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL
國立交通大學 2014-12-08T15:26:10Z The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC

显示项目 161-170 / 410 (共41页)
<< < 12 13 14 15 16 17 18 19 20 21 > >>
每页显示[10|25|50]项目