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"huang ch"的相關文件
顯示項目 146-170 / 410 (共17頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
| 國立交通大學 |
2014-12-08T15:40:57Z |
High-density MIM canpacitors using AlTaOx dielectrics
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Yang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:51Z |
Mechanism of particle impaction and filtration by the dry porous metal substrates of an inertial impactor
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Huang, CH; Tsai, CJ |
| 國立交通大學 |
2014-12-08T15:40:50Z |
Optimization and implementation of piezoelectric radiators using the genetic algorithm
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Bai, MSR; Huang, CH |
| 國立交通大學 |
2014-12-08T15:40:46Z |
The design and implementation of the NCTUns 1.0 network simulator
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Wang, SY; Chou, CL; Huang, CH; Hwang, CC; Yang, ZM; Chiou, CC; Lin, CC |
| 國立交通大學 |
2014-12-08T15:40:17Z |
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics
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Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:40:13Z |
Control of particle re-entrainment by wetting the exposed surface of dust samples
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Tsai, CJ; Lee, CI; Lin, JS; Huang, CH |
| 國立交通大學 |
2014-12-08T15:40:06Z |
Field test of a porous-metal denuder sampler
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Tsai, CJ; Huang, CH; Lin, YC; Shih, TS; Shih, BH |
| 國立交通大學 |
2014-12-08T15:40:03Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2 n- and p-MOSFETs
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Yu, DS; Wu, CH; Huang, CH; Chin, A; Chen, WJ; Zhu, CX; Li, MF; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Studies on ferroelectric properties of sol-gel derived Pb(Zr0.53Ti0.47)O-3 using Ba0.5Sr0.5RuO3 as the conductive electrodes
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Wang, YK; Huang, CH; Tseng, TY; Linb, P |
| 國立交通大學 |
2014-12-08T15:39:52Z |
Device level characterization for energy bandgap of strain-relaxed SiGe and oxide/SiGe barrier height
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Huang, CH; Yu, DS; Chin, A; Chen, WJ; McAlister, SP |
| 國立交通大學 |
2014-12-08T15:39:48Z |
Predicting the permeability and tensile properties of multilayer films from the properties of the individual component layers
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Huang, CH; Wu, JS; Huang, CC |
| 國立交通大學 |
2014-12-08T15:39:41Z |
Adsorption capacity of a nylon filter of filter pack system for HCl and HNO3 gases
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Tsai, CJ; Huang, CH; Lu, HH |
| 國立交通大學 |
2014-12-08T15:39:36Z |
Electrical and dielectric behavior of fluorite-like Sr0.8Bi2.6Ta2O9 thin films pyrolyzed and thermally annealed at 450 degrees C
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Huang, CH; Chou, HY; Lian, CW; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:39:33Z |
Morphological, thermal, barrier and mechanical properties of LDPE/EVOH blends in extruded blown films
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Huang, CH; Wu, JS; Huang, CC; Lin, LS |
| 國立交通大學 |
2014-12-08T15:39:32Z |
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates
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Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Self-generated NAF nano template assisted formation of porous carbon nanotube arrays.
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Chiu, HT; Huang, CH; Chang, YH; Lee, CY; Cheng, SF; Wang, HW |
| 國立交通大學 |
2014-12-08T15:39:15Z |
A universal calibration curve for the TSI aerodynamic particle sizer
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Tsai, CJ; Chen, SC; Huang, CH; Chen, DR |
| 國立交通大學 |
2014-12-08T15:39:08Z |
Measurement of inorganic acidic gases and particles from the stack of semiconductor and optoelectronic industries
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Huang, CH; Ho, YT; Tsai, CJ |
| 國立交通大學 |
2014-12-08T15:38:52Z |
Memory properties of metal/ferroelectric/semiconductor and metal/ferroelectric/insulator/semiconductor structures using rf sputtered ferroelectric Sr0.8Bi2.5Ta1.2Nb0.8O9 thin films
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Huang, CH; Wang, YK; Lue, HT; Huang, JY; Lee, MZ; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:37:13Z |
Predicting the permeability and tensile behavior of high density polyethylene/tie/polyamide 6 three-layer films
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Huang, CH; Wu, JS; Huang, CC |
| 國立交通大學 |
2014-12-08T15:36:47Z |
Virtual integration and profitability: some evidence from Taiwan's IC industry
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Chu, PY; Teng, MJ; Huang, CH; Lin, HS |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Layout design of high-quality SOI varactor
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Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:18Z |
Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
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Huang, CH; Yu, DS; Chin, A; Wu, CH; Chen, WJ; Zhu, CX; Li, MF; Cho, BJ; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:18Z |
RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation
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Chin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
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Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC |
顯示項目 146-170 / 410 (共17頁) << < 1 2 3 4 5 6 7 8 9 10 > >> 每頁顯示[10|25|50]項目
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