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Showing items 1-9 of 9  (1 Page(s) Totally)
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Institution Date Title Author
嘉南藥理大學 2014-07 A comparison of residents' satisfaction with temporary housing: a case study of two temporary housing Taiwan Chen, Po-Tsung; Yao, George C.; Yu, Chi; Liu, Li-Fan; Wen, Ju-Huey; Huang, Chao-Hsing
國立成功大學 2014-07 A comparison of residents' satisfaction with temporary housing: a case study of two temporary housing Taiwan Chen, Po-Tsung; Yao, George C.; Yu, Chi; Liu, Li-Fan; Wen, Ju-Huey; Huang, Chao-Hsing
國立臺灣大學 1996 Low frequency noise characteristics of AlInAs/InGaAs heterojunction bipolar transistors Jang, Sheng-Lyang; Chen, Way-Ming; Lin, Hao-Hsiung; Huang, Chao-Hsing
國立臺灣大學 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
臺大學術典藏 1995 Relation between the collector current and the two-dimensional electron gas stored in the base-collector heterojunction notch of InAlAs/InGaAs/InAlGaAs DHBTs Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lee, Tsuen-Lin; Lin, Hao-Hsiung
國立臺灣大學 1993 Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors Huang, Chao-Hsing; Lin, Hao-Hsiung
臺大學術典藏 1993 Effect of two-dimensional electron gas on the d.c. characteristics of InAlAs/InGaAs double heterojunction bipolar transistors Huang, Chao-Hsing; Lin, Hao-Hsiung; Huang, Chao-Hsing; Lin, Hao-Hsiung
國立臺灣大學 1992-04 High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy Lin, Hao-Hsiung; Huang, Chao-Hsing
臺大學術典藏 1992-04 High-gain InAlAs/InGaAs npn single heterojunction bipolar transistors grown by molecular beam epitaxy Lin, Hao-Hsiung; Huang, Chao-Hsing; Lin, Hao-Hsiung; Huang, Chao-Hsing

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