English  |  正體中文  |  简体中文  |  Total items :2856655  
Visitors :  53549974    Online Users :  1365
Project Commissioned by the Ministry of Education
Project Executed by National Taiwan University Library
 
臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
About TAIR

Browse By

News

Copyright

Related Links

"huang chun yang"

Return to Browse by Author
Sorting by Title Sort by Date

Showing items 1-10 of 18  (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page

Institution Date Title Author
國立交通大學 2019-04-02T05:57:53Z High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2016-03-28T00:04:10Z Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen
東吳大學 2016 最適投資組合權重之影響因子分析:以ETF市場為例 黃竣暘; HUANG, CHUN-YANG
國立交通大學 2015-12-02T02:59:37Z Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen
國立交通大學 2015-07-21T08:31:27Z STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICES Huang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen
國立交通大學 2015-07-21T08:29:39Z Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2015-07-21T08:29:32Z Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen
國立交通大學 2014-12-12T02:45:28Z 高可靠度特性的過渡金屬氧化物電阻式記憶體製作與特性研究 黃駿揚; Huang, Chun-Yang; 曾俊元; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:36:57Z Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer Chand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen
國立交通大學 2014-12-08T15:36:57Z Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory Huang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen

Showing items 1-10 of 18  (2 Page(s) Totally)
1 2 > >>
View [10|25|50] records per page