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"huang chun yang"
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| 國立交通大學 |
2019-04-02T05:57:53Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO3 memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2016-03-28T00:04:10Z |
Metal induced crystallized poly-Si-based conductive bridge resistive switching memory device with one transistor and one resistor architecture
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Chand, Umesh; Huang, Chun-Yang; Kumar, Dayanand; Tseng, Tseung-Yuen |
| 東吳大學 |
2016 |
最適投資組合權重之影響因子分析：以ETF市場為例
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黃竣暘; HUANG, CHUN-YANG |
| 國立交通大學 |
2015-12-02T02:59:37Z |
Mechanism of Nonlinear Switching in HfO2-Based Crossbar RRAM With Inserting Large Bandgap Tunneling Barrier Layer
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Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:31:27Z |
STABLE RESISTIVE SWITCHING CHARACTERISTICS OF Al2O3 LAYERS INSERTED IN HfPO2 BASED RRAM DEVICES
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Huang, Chun-Yang; Jieng, Jheng-Hong; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:39Z |
Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory
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Chand, Umesh; Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2015-07-21T08:29:32Z |
Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure
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Chand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-12T02:45:28Z |
高可靠度特性的過渡金屬氧化物電阻式記憶體製作與特性研究
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黃駿揚; Huang, Chun-Yang; 曾俊元; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Mechanism of High Temperature Retention Property (up to 200 degrees C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer
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Chand, Umesh; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:57Z |
Compact Ga-Doped ZnO Nanorod Thin Film for Making High-Performance Transparent Resistive Switching Memory
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Huang, Chun-Yang; Ho, Yen-Ting; Hung, Chung-Jung; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:36:20Z |
Resistive switching characteristics of Pt/CeOx/TiN memory device
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Ismail, Muhammad; Talib, Ijaz; Huang, Chun-Yang; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Chand, Umesh; Lin, Chun-An; Ahmed, Ejaz; Rana, Anwar Manzoor; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:35:07Z |
Forming-free bipolar resistive switching in nonstoichiometric ceria films
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Ismail, Muhammad; Huang, Chun-Yang; Panda, Debashis; Hung, Chung-Jung; Tsai, Tsung-Ling; Jieng, Jheng-Hong; Lin, Chun-An; Chand, Umesh; Rana, Anwar Manzoor; Ahmed, Ejaz; Talib, Ijaz; Nadeem, Muhammad Younus; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:34:59Z |
Switching mechanism of double forming process phenomenon in ZrOx/HfOy bilayer resistive switching memory structure with large endurance
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Huang, Chun-Yang; Huang, Chung-Yu; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:31:42Z |
Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
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Huang, Chun-Yang; Jieng, Jheng-Hong; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:22:51Z |
Resistive switching characteristics of nickel silicide layer embedded HfO2 film
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Panda, Debashis; Huang, Chun-Yang; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:06:33Z |
High-speed and localized resistive switching characteristics of double-layer SrZrO(3) memory devices
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Lin, Meng-Han; Wu, Ming-Chi; Huang, Chun-Yang; Lin, Chen-Hsi; Tseng, Tseung-Yuen |
| 國立成功大學 |
2008-12-18 |
甜蜜的負擔!? 探究台灣的「單身寄生族」
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黃俊揚; Huang, Chun-Yang |
| 國立成功大學 |
2008-12-18 |
甜蜜的負擔!? 探究台灣的「單身寄生族」
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黃俊揚; Huang, Chun-Yang |
Showing items 1-18 of 18 (1 Page(s) Totally)
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