臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Institution	Date	Title	Author
國立東華大學	2006	n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors	Lin,Y. S.; Huang,D. H.; Wu,Y. H.; Hsu,R. T.; Wang,T. B.; Hsu,W. C.
國立東華大學	2006	Improved InAlGaP-based heterostructure field-effect transistors	Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C.
國立東華大學	2006	Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning	Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C.
國立東華大學	2006	Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron- mobility transistors with a symmetrically graded 3 and an inversely graded channel	Lin,Y. S.; WuY. H.; Liao,Y. K.; Huang,J. C.; Hsu,R. T.; Huang,D. H.; Hsu,W. C.
國立東華大學	2006	InP-based double heterojunction bipolar transistor with emitter edge-thinning	Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J.
國立東華大學	2005-08	Electrical characteristics of -doping InGaP/GaAs heterojunction-emitter bipolar transistor	Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang, T. B.; Su,K. H.
國立成功大學	2005-06	Characteristics of In0.425Al0.575As-InxGa(1-x) as metamorphic HEMTs with pseudomorphic and symmetrically graded channels	Hsu, Wei-Chou; Chen, Y. J.; Lee, C. S.; Wang, T. B.; Huang, J. C.; Huang, D. H.; Su, K. H.; Lin, Y. S.; Wu, C. L.
國立東華大學	2005	Characteristics of In0.425Al0.575As/ InXGa1-XAs metamorphic HEMTs with pseudomorphic and symmetrically- graded channel	Lin,Y. S.; Wu,C. L.; Hsu,W. C.; Su,K. H.; Huang,D. H.; Huang,J. C.; Wang,T. B.; Lee,C. S.; Chen,Y. J.
國立東華大學	2005	Improved InP/InGaAs double heterojunction bipolar transistor	Lin,Y. S.; Hsu,W. C.; Chen,Y. J.; Huang,D. H.; Wang, T. B.; Huang,J. H.
國立成功大學	2004-11-22	Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors	Chen, Y. J.; Hsu, Wei-Chou; Lee, C. S.; Wang, T. B.; Tseng, C. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.

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