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Showing items 6-15 of 27  (3 Page(s) Totally)
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Institution Date Title Author
國立臺灣科技大學 2016 Estimated network reliability evaluation for a stochastic flexible flow shop network with different types of jobs Lin, Y.-K;Huang, D.-H;Huang, C.-F.
國立成功大學 2007-02-26 delta-doped InGaP/GaAs heterostructure-emitter bipolar transistor grown by metalorganic chemical vapor deposition Lin, Y. S.; Huang, D. H.; Chen, Yen-Wei; Huang, J. C.; Hsu, Wei-Chou
國立東華大學 2007 -doped InGaP/GaAs heterostrucure-emitter bipolar transistor grown by metalorganic chemical vapor deposition Lin,Y. S.; Huang,D. H.; Hsu,W. C.; Huang,J. C.; Chen,Y. W.
國立東華大學 2007 A metamorphic heterostructure field-effect transistor with a double delta-doped channel Lin,Y. S.; Yeh,J. H.; Huang,J. C.; Huang,D. H.; Hsu,W. C.
國立東華大學 2007 Thermal-stable characteristics of metamorphic double delta-doped heterostructure field-effect transistor Lin,Y. S.; Huang,J. C.; Huang,D. H.; Hsu,W. C.
國立東華大學 2006-08 n+-GaAs/p+-InAlGaP/n-InAlGaP camel-gate high-electron mobility transistors grown by MOCVD Lin,Y. S.; Huang,D. H.; Hsu, W. C.; Hsu,R. T.; Wu,Y. H.
國立東華大學 2006-08 InP-based composite-collector double heterojunction bipolar transistor Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang,T. B.; Su,K. H.
國立成功大學 2006-05-29 High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L.
國立成功大學 2006-04 Improved InAlGaP-based heterostructure field-effect transistors Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa
國立成功大學 2006-03 Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B.

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