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"huang d h"的相关文件
显示项目 11-20 / 27 (共3页)
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| 國立東華大學 |
2006-08 |
n+-GaAs/p+-InAlGaP/n-InAlGaP camel-gate high-electron mobility transistors grown by MOCVD
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Lin,Y. S.; Huang,D. H.; Hsu, W. C.; Hsu,R. T.; Wu,Y. H. |
| 國立東華大學 |
2006-08 |
InP-based composite-collector double heterojunction bipolar transistor
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Lin,Y. S.; Hsu,W. C.; Huang,D. H.; Wang,T. B.; Su,K. H. |
| 國立成功大學 |
2006-05-29 |
High-temperature threshold characteristics of a symmetrically graded InAlAs/InxGa1-xAs/GaAs metamorphic high electron mobility transistor
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Lee, C. S.; Chen, Y. J.; Hsu, Wei-Chou; Su, K. H.; Huang, J. C.; Huang, D. H.; Wu, C. L. |
| 國立成功大學 |
2006-04 |
Improved InAlGaP-based heterostructure field-effect transistors
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Wang, T. B.; Su, K. H.; Huang, J. C.; Ho, Ching-Hwa |
| 國立成功大學 |
2006-03 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning
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Lin, Yu-Shyan; Huang, D. H.; Hsu, Wei-Chou; Su, K. H.; Wang, T. B. |
| 國立東華大學 |
2006 |
n+-GaAs/p+-InAlGaP/n+-InAlGaP camel-gate high-electron mobility transistors
|
Lin,Y. S.; Huang,D. H.; Wu,Y. H.; Hsu,R. T.; Wang,T. B.; Hsu,W. C. |
| 國立東華大學 |
2006 |
Improved InAlGaP-based heterostructure field-effect transistors
|
Lin,Y. S.; Huang,D. H.; Ho,C. H.; Huang,J. C.; Su,K. H.; Wang,T. B.; Hsu,W. C. |
| 國立東華大學 |
2006 |
Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistor using emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Su,K. H.; Hsu,W. C. |
| 國立東華大學 |
2006 |
Comparative study of In0.52Al0.48As/InxGa1-xAs/InP high-electron- mobility transistors with a symmetrically graded 3 and an inversely graded channel
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Lin,Y. S.; WuY. H.; Liao,Y. K.; Huang,J. C.; Hsu,R. T.; Huang,D. H.; Hsu,W. C. |
| 國立東華大學 |
2006 |
InP-based double heterojunction bipolar transistor with emitter edge-thinning
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Lin,Y. S.; Huang,D. H.; Wang,T. B.; Hsu,W. C.; Su,K. H.; Huang, J. C.; Yu,S. J. |
显示项目 11-20 / 27 (共3页)
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