|
|
Taiwan Academic Institutional Repository >
Browse by Author
|
"huang fon shan"
Showing items 1-14 of 14 (1 Page(s) Totally)
1
View [10|25|50] records per page
| 國立交通大學 |
2019-04-02T06:00:56Z |
Application of Supercritical CO2 Fluid for Dielectric Improvement of SiOx Film
|
Tsai, Chih-Tsung; Chang, Ting-Chang; Liu, Po-Tsun; Cheng, Yi-Li; Kin, Kon-Tsu; Huang, Fon-Shan |
| 國立交通大學 |
2019-04-02T05:59:53Z |
Effect of NH3 Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Lin, Cheng-Li; Yeh, Wen-Kuan; Huang, Guo-Wei; Lai, Chien-Ming; Chen, Yi-Wen; Hsu, Che-Hua; Huang, Fon-Shan |
| 國立交通大學 |
2019-04-02T05:59:43Z |
Impact of Highly Compressive Interlayer-Dielectric-SiNx Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
| 國立交通大學 |
2019-04-02T05:58:54Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device Application
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立交通大學 |
2014-12-08T15:47:37Z |
Impact of Highly Compressive Interlayer-Dielectric-SiN(x) Stressing Layer on 1/f Noise and Reliability of SiGe-Channel pMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:13:40Z |
Low-temperature method for enhancing sputter-deposited HfO2 films with complete oxidization
|
Tsai, Chih-Tsung; Chang, Ting-Chang; Liu, Po-Tsun; Yang, Po-Yu; Kuo, Yu-Chieh; Kin, Kon-Tsu; Chang, Pei-Lin; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Effect of NH(3) Plasma Nitridation on Hot-Carrier Instability and Low-Frequency Noise in Gd-Doped High-kappa Dielectric nMOSFETs
|
Chen, Yu-Ting; Chen, Kun-Ming; Lin, Cheng-Li; Yeh, Wen-Kuan; Huang, Guo-Wei; Lai, Chien-Ming; Chen, Yi-Wen; Hsu, Che-Hua; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:11:03Z |
Low temperature improvement on silicon oxide grown by electron-gun evaporation for resistance memory applications
|
Tsai, Chih-Tsung; Chang, Ting-Chang; Liu, Po-Tsun; Cheng, Yi-Li; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:10:28Z |
Application of Supercritical CO(2) Fluid for Dielectric Improvement of SiO(x) Film
|
Tsai, Chih-Tsung; Chang, Ting-Chang; Liu, Po-Tsun; Cheng, Yi-Li; Kin, Kon-Tsu; Huang, Fon-Shan |
| 國立交通大學 |
2014-12-08T15:07:53Z |
High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device Application
|
Hu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen |
| 國立高雄大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
|
Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立成功大學 |
2011-03 |
The Improvement of High-k/Metal Gate pMOSFET Performance and Reliability Using Optimized Si Cap/SiGe Channel Structure
|
Yeh, Wen-Kuan; Chen, Yu-Ting; Huang, Fon-Shan; Hsu, Chia-Wei; Chen, Chun-Yu; Fang, Yean-Kuen; Gan, Kwang-Jow; Chen, Po-Ying |
| 國立高雄大學 |
2010-02 |
The Impact of Oxide Traps Induced by SOI Thickness on Reliability of Fully Silicide Metal-Gate Strained SOI MOSFET
|
Lin, Cheng-Li; Chen, Yu-Ting; Huang, Fon-Shan; Yeh, Wen-Kuan; Lin, Chien-Ting |
| 國立聯合大學 |
2010 |
Impact of highly compressive interlayer-dielectric-SiNx stressing layer on 1/f noise and reliability of sige-channel pMOSFETs
|
Chen, Yu-Ting ; Chen, Kun-Ming; Liao, Wen-Shiang; Huang, Guo-Wei; Huang, Fon-Shan |
Showing items 1-14 of 14 (1 Page(s) Totally)
1
View [10|25|50] records per page
|
