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"huang g w"的相关文件
显示项目 31-40 / 54 (共6页)
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| 國立交通大學 |
2018-08-21T05:56:59Z |
Ge Nanowire FETs with HfZrOx Ferroelectric Gate Stack Exhibiting SS of Sub-60 mV/dec and Biasing Effects on Ferroelectric Reliability
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Su, C. -J.; Hong, T. -C.; Tsou, Y. -C.; Hou, F. -J.; Sung, P. -J.; Yeh, M. -S.; Wan, C. -C.; Kao, K. -H.; Tang, Y. -T.; Chiu, C. -H.; Wang, C. -J.; Chung, S. -T.; You, T. -Y.; Huang, Y. -C.; Wu, C. -T.; Lin, K. -L.; Luo, G. -L.; Huang, K. -P.; Lee, Y. -J.; Chao, T. -S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Yeh, W. -K.; Wang, Y. -H. |
| 國立交通大學 |
2018-08-21T05:56:39Z |
High Performance Complementary Ge Peaking FinFETs by Room Temperature Neutral Beam Oxidation for Sub-7 nm Technology Node Applications
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Lee, Y. -J.; Hong, T. -C.; Hsueh, F. -K.; Sung, P. J.; Chen, C. -Y.; Chuang, S. -S.; Cho, T. -C.; Noda, S.; Tsou, Y. -C.; Kao, K. -H.; Wu, C. -T.; Yu, T. -Y.; Jian, Y. -L.; Su, C. -J.; Huang, Y. -M.; Huang, W. -H.; Chen, B. -Y.; Chen, M. -C.; Huang, K. -P.; Li, J. -Y.; Chen, M. -J.; Li, Y.; Samukawa, S.; Wu, W. -F.; Huang, G. -W.; Shieh, J. -M.; Tseng, T. -Y.; Chao, T. -S.; Wang, Y. -H.; Yeh, W. -K. |
| 國立交通大學 |
2017-04-21T06:49:37Z |
Pad Characterization for CMOS Technology Using Time Domain Reflectometry
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Chiu, C. S.; Chen, W. L.; Liao, K. H.; Chen, B. Y.; Teng, Y. M.; Huang, G. W.; Wu, L. K. |
| 國立成功大學 |
2017 |
High performance complementary Ge peaking FinFETs by room temperature neutral beam oxidation for sub-7 nm technology node applications
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Lee, Y.-J.;Hong, T.-C.;Hsueh, F.-K.;Sung, P.-J.;Chen, Chen C.-Y.;Chuang, S.-S.;Cho, T.-C.;Noda, S.;Tsou, Y.-C.;Kao, Kao K.-H.;Wu, C.-T.;Yu, T.-Y.;Jian, Y.-L.;Su, C.-J.;Huang, Y.-M.;Huang, W.-H.;Chen, B.-Y.;Chen, M.-C.;Huang, K.-P.;Li, J.-Y.;Chen, M.-J.;Li, Y.;Samukawa, Samukawa S.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Tseng, Tseng T.-Y.;Chao, T.-S.;Wang, Y.-H.;Yeh, W.-K. |
| 國立成功大學 |
2017 |
Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION
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Su, C.-J.;Tang, Y.-T.;Tsou, Y.-C.;Sung, P.-J.;Hou, F.-J.;Wang, C.-J.;Chung, S.-T.;Hsieh, C.-Y.;Yeh, Yeh Y.-S.;Hsueh, F.-K.;Kao, Kao K.-H.;Chuang, S.-S.;Wu, C.-T.;You, T.-Y.;Jian, Y.-L.;Chou, T.-H.;Shen, Y.-L.;Chen, B.-Y.;Luo, G.-L.;Hong, T.-C.;Huang, K.-P.;Chen, M.-C.;Lee, Y.-J.;Chao, T.-S.;Tseng, Tseng T.-Y.;Wu, Wu W.-F.;Huang, G.-W.;Shieh, J.-M.;Yeh, W.-K.;Wang, Y.-H. |
| 國立交通大學 |
2014-12-08T15:29:56Z |
UWB Gilbert downconverter with lumped-distributed phase-inverter rat-race coupler based on Chebyshev band-broadening technique
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Wei, H. -J.; Meng, C.; Chang, C. -H.; Huang, G. -W. |
| 國立交通大學 |
2014-12-08T15:29:21Z |
2.4/5.7-GHz Dual-Band Dual-Conversion Low-IF Downconverter Using 0.35 mu m SiGe HBT Technology
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Syu, J. -S.; Meng, C. C.; Yu, S. -W.; Huang, G. -W. |
| 國立交通大學 |
2014-12-08T15:25:29Z |
RF characteristics of BJT devices with selectively or fully ion-implanted collector
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Meng, C. C.; Su, J. Y.; Tsou, B. C.; Huang, G. W. |
| 國立交通大學 |
2014-12-08T15:24:55Z |
4-GHz low-phase-noise transformer-based top-series GaInP/GaAs HBT QVCO
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Meng, C. C.; Tseng, S. C.; Chang, Y. W.; Su, J. Y.; Huang, G. W. |
| 國立交通大學 |
2014-12-08T15:24:44Z |
4-GHz fully monolithic SiGe HBT QVCO using superharmonic coupling topology
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Tseng, S. C.; Meng, C. C.; Chang, Y. W.; Huang, G. W. |
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