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Taiwan Academic Institutional Repository >
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"huang gw"
Showing items 26-50 of 77 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:37:17Z |
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:36Z |
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
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Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:33Z |
A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement
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Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Layout design of high-quality SOI varactor
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Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
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Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
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Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
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Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:58Z |
Computation of noise parameters using genetic algorithms
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Chen, HY; Chen, KM; Huang, GW; Cho, MH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:25:49Z |
An accurate RF CMOS gate resistance model compatible with HSPICE
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Lin, HW; Chung, SS; Wong, SC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Impact of hot carrier stress on RF power characteristics of MOSFETs
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC |
| 國立交通大學 |
2014-12-08T15:25:25Z |
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:33Z |
An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:19:20Z |
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
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Meng, CC; Hsu, SK; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:10Z |
RF MOSFET characterization by four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:07Z |
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
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Meng, CC; Hsu, SK; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Extraction of substrate parameters for RF MOSFETs based on four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:57Z |
Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
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Chen, KM; Hu, HH; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A novel approach for parameter determination of HBT small-signal equivalent circuit
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
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Wu, TH; Meng, CC; Huang, GW |
Showing items 26-50 of 77 (4 Page(s) Totally)
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