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"huang gw"的相關文件
顯示項目 41-65 / 77 (共4頁)
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| 國立交通大學 |
2014-12-08T15:25:08Z |
Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:33Z |
An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:19:20Z |
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
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Meng, CC; Hsu, SK; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:10Z |
RF MOSFET characterization by four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:07Z |
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
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Meng, CC; Hsu, SK; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Extraction of substrate parameters for RF MOSFETs based on four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:57Z |
Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
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Chen, KM; Hu, HH; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A novel approach for parameter determination of HBT small-signal equivalent circuit
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:50Z |
Noise parameters computation of microwave devices using genetic algorithms
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Chen, HY; Huang, GW; Chen, KM; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:48Z |
Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
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Chen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V |
| 國立交通大學 |
2014-12-08T15:18:38Z |
5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
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Meng, CC; Chen, CH; Chang, YW; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:34Z |
A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs
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Cho, MH; Huang, GW; Wu, LK; Chiu, CS; Wang, YH; Chen, KM; Tsen, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:18:20Z |
A scalable noise de-embedding technique for on-wafer microwave device characterization
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Cho, MH; Huang, GW; Wang, YH; Wu, LK |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
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Tseng, SC; Meng, CC; Li, YH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
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Meng, CC; Su, JY; Tsou, BC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:16:33Z |
An improved parameter-extraction method of SiGe HBTs' substrate network
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:04Z |
CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
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CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:15Z |
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:13Z |
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:03:04Z |
BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, CT; HUANG, GW; TSAI, WC; CHANG, CY |
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