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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:43:36Z Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY
國立交通大學 2014-12-08T15:43:21Z An automatic macro program for radio frequency MOSFET characteristics analysis Su, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY
國立交通大學 2014-12-08T15:42:30Z A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement Lue, HT; Tseng, TY; Huang, GW
國立交通大學 2014-12-08T15:42:25Z A macro model of silicon spiral inductor Su, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY
國立交通大學 2014-12-08T15:41:56Z Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors Chen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY
國立交通大學 2014-12-08T15:39:42Z Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T
國立交通大學 2014-12-08T15:39:27Z DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology Meng, CC; Wu, TH; Huang, GW
國立交通大學 2014-12-08T15:39:26Z Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures Chen, KM; Hu, HH; Huang, GW; Yeh, WK; Chang, CY
國立交通大學 2014-12-08T15:39:17Z A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:39:08Z Hot-carrier effects on power characteristics of SiGeHBTs Huang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:39:05Z Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate Lien, YC; Chang, EY; Chang, HC; Chu, LH; Huang, GW; Lee, HM; Lee, CS; Chen, SH; Shen, PT; Chang, CY
國立交通大學 2014-12-08T15:38:58Z InGaP/InGaAs PHEMT with high IP3 for low noise applications Lin, YC; Chang, EY; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY
國立交通大學 2014-12-08T15:38:55Z Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications Chang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY
國立交通大學 2014-12-08T15:38:44Z Pocket implantation effect on drain current flicker noise in analog nMOSFET devices Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH
國立交通大學 2014-12-08T15:37:19Z A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter Meng, CC; Lin, MQ; Huang, GW
國立交通大學 2014-12-08T15:37:17Z Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T
國立交通大學 2014-12-08T15:26:36Z Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T
國立交通大學 2014-12-08T15:26:33Z A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement Lue, HT; Tseng, TY; Huang, GW
國立交通大學 2014-12-08T15:26:21Z Layout design of high-quality SOI varactor Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY
國立交通大學 2014-12-08T15:26:10Z The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC
國立交通大學 2014-12-08T15:26:10Z A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW
國立交通大學 2014-12-08T15:26:10Z A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW
國立交通大學 2014-12-08T15:26:09Z A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW
國立交通大學 2014-12-08T15:26:09Z A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW
國立交通大學 2014-12-08T15:25:58Z Computation of noise parameters using genetic algorithms Chen, HY; Chen, KM; Huang, GW; Cho, MH; Chang, CY
國立交通大學 2014-12-08T15:25:51Z Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors Huang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY
國立交通大學 2014-12-08T15:25:49Z An accurate RF CMOS gate resistance model compatible with HSPICE Lin, HW; Chung, SS; Wong, SC; Huang, GW
國立交通大學 2014-12-08T15:25:25Z Impact of hot carrier stress on RF power characteristics of MOSFETs Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC
國立交通大學 2014-12-08T15:25:25Z A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner Wu, TH; Meng, CC; Huang, GW
國立交通大學 2014-12-08T15:25:22Z Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T
國立交通大學 2014-12-08T15:25:08Z Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY
國立交通大學 2014-12-08T15:19:33Z An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:19:20Z A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements Meng, CC; Hsu, SK; Wu, TH; Huang, GW
國立交通大學 2014-12-08T15:19:10Z RF MOSFET characterization by four-port measurement Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY
國立交通大學 2014-12-08T15:19:07Z A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator Meng, CC; Hsu, SK; Huang, GW
國立交通大學 2014-12-08T15:19:04Z Extraction of substrate parameters for RF MOSFETs based on four-port measurement Wu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL
國立交通大學 2014-12-08T15:18:57Z Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress Chen, KM; Hu, HH; Huang, GW; Chang, CY
國立交通大學 2014-12-08T15:18:55Z Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY
國立交通大學 2014-12-08T15:18:53Z A novel approach for parameter determination of HBT small-signal equivalent circuit Chen, HY; Chen, KM; Huang, GW; Chang, CY
國立交通大學 2014-12-08T15:18:53Z A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology Wu, TH; Meng, CC; Huang, GW
國立交通大學 2014-12-08T15:18:50Z Noise parameters computation of microwave devices using genetic algorithms Chen, HY; Huang, GW; Chen, KM; Chang, CY
國立交通大學 2014-12-08T15:18:48Z Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications Chen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V
國立交通大學 2014-12-08T15:18:38Z 5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers Meng, CC; Chen, CH; Chang, YW; Huang, GW
國立交通大學 2014-12-08T15:18:34Z A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs Cho, MH; Huang, GW; Wu, LK; Chiu, CS; Wang, YH; Chen, KM; Tsen, HC; Hsu, TL
國立交通大學 2014-12-08T15:18:29Z Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH
國立交通大學 2014-12-08T15:18:20Z A scalable noise de-embedding technique for on-wafer microwave device characterization Cho, MH; Huang, GW; Wang, YH; Wu, LK
國立交通大學 2014-12-08T15:17:00Z The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies Tseng, SC; Meng, CC; Li, YH; Huang, GW
國立交通大學 2014-12-08T15:17:00Z The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices Meng, CC; Su, JY; Tsou, BC; Huang, GW
國立交通大學 2014-12-08T15:16:33Z An improved parameter-extraction method of SiGe HBTs' substrate network Chen, HY; Chen, KM; Huang, GW; Chang, CY
國立交通大學 2014-12-08T15:04:11Z LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ

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