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"huang gw"的相關文件
顯示項目 11-60 / 77 (共2頁)
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| 國立交通大學 |
2014-12-08T15:43:36Z |
Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
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Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:43:21Z |
An automatic macro program for radio frequency MOSFET characteristics analysis
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Su, CY; Chang, SJ; Chen, LP; Ho, YP; Huang, GW; Lin, DC; Tseng, BM; Lee, HY; Kuan, JF; Deng, YM; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:30Z |
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
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Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:42:25Z |
A macro model of silicon spiral inductor
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Su, CY; Chen, LP; Chang, SJ; Tseng, BM; Lin, DC; Huang, GW; Ho, YP; Lee, HY; Kuan, JF; Wen, WY; Liou, P; Chen, CL; Leu, LY; Wen, KA; Chang, CY |
| 國立交通大學 |
2014-12-08T15:41:56Z |
Analysis of low-frequency noise in boron-doped polycrystalline silicon-germanium resistors
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Chen, KM; Huang, GW; Chiu, DY; Huang, HJ; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:42Z |
Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
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Lee, DY; Huang, TY; Lin, HC; Chiang, WJ; Huang, GW; Wanga, T |
| 國立交通大學 |
2014-12-08T15:39:27Z |
DC-12-GHz 10-dB gain shunt-series shunt-shunt wideband amplifiers by commercially available 0.35 mu M SiGe HBT technology
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Meng, CC; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:39:26Z |
Low-frequency noise in partially depleted SOI MOSFETs operating from linear region to saturation region at various temperatures
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Chen, KM; Hu, HH; Huang, GW; Yeh, WK; Chang, CY |
| 國立交通大學 |
2014-12-08T15:39:17Z |
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:08Z |
Hot-carrier effects on power characteristics of SiGeHBTs
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Huang, SY; Chen, KM; Huang, GW; Tseng, HC; Hsu, TL; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:39:05Z |
Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gate
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Lien, YC; Chang, EY; Chang, HC; Chu, LH; Huang, GW; Lee, HM; Lee, CS; Chen, SH; Shen, PT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:58Z |
InGaP/InGaAs PHEMT with high IP3 for low noise applications
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Lin, YC; Chang, EY; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:55Z |
Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications
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Chang, EY; Lin, YC; Chen, GJ; Lee, HM; Huang, GW; Biswas, D; Chang, CY |
| 國立交通大學 |
2014-12-08T15:38:44Z |
Pocket implantation effect on drain current flicker noise in analog nMOSFET devices
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Wu, JW; Cheng, CC; Chiu, KL; Guo, JC; Lien, WY; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:37:19Z |
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
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Meng, CC; Lin, MQ; Huang, GW |
| 國立交通大學 |
2014-12-08T15:37:17Z |
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Chang, CS; Huang, GW; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:36Z |
Process and doping species dependence of negative-bias-temperature instability for p-channel MOSFETs
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Lee, DY; Lin, HC; Chiang, WJ; Lu, WT; Huang, GW; Huang, TY; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:33Z |
A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement
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Lue, HT; Tseng, TY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:21Z |
Layout design of high-quality SOI varactor
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Chen, HY; Chen, KM; Huang, GW; Huang, CH; Yang, TH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
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Huang, CH; Chan, KT; Chen, CY; Chin, A; Huang, GW; Tseng, C; Liang, V; Chen, JK; Chien, SC |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:10Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
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Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
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Meng, CC; Hsu, SK; Peng, AS; Wen, SY; Huang, GW |
| 國立交通大學 |
2014-12-08T15:26:09Z |
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
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Meng, CC; Xu, SK; Wu, TH; Chao, MH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:58Z |
Computation of noise parameters using genetic algorithms
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Chen, HY; Chen, KM; Huang, GW; Cho, MH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:25:51Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:25:49Z |
An accurate RF CMOS gate resistance model compatible with HSPICE
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Lin, HW; Chung, SS; Wong, SC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:25Z |
Impact of hot carrier stress on RF power characteristics of MOSFETs
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC |
| 國立交通大學 |
2014-12-08T15:25:25Z |
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:25:22Z |
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown
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Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:33Z |
An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
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Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:19:20Z |
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
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Meng, CC; Hsu, SK; Wu, TH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:10Z |
RF MOSFET characterization by four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:19:07Z |
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
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Meng, CC; Hsu, SK; Huang, GW |
| 國立交通大學 |
2014-12-08T15:19:04Z |
Extraction of substrate parameters for RF MOSFETs based on four-port measurement
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Wu, SD; Huang, GW; Chen, KM; Chang, CY; Tseng, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:57Z |
Degradation of low-frequency noise in partially depleted silicon-on-insulator metal oxide semiconductor field-effect transistors by hot-carrier stress
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Chen, KM; Hu, HH; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:55Z |
Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors
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Huang, SY; Chen, KM; Huang, GW; Liang, V; Tseng, HC; Hsu, TL; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A novel approach for parameter determination of HBT small-signal equivalent circuit
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:53Z |
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
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Wu, TH; Meng, CC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:50Z |
Noise parameters computation of microwave devices using genetic algorithms
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Chen, HY; Huang, GW; Chen, KM; Chang, CY |
| 國立交通大學 |
2014-12-08T15:18:48Z |
Linearity and power characteristics of SiGeHBTs at high temperatures for RF applications
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Chen, KM; Peng, AS; Huang, GW; Chen, HY; Huang, SY; Chang, CY; Tseng, HC; Hsu, TL; Liang, V |
| 國立交通大學 |
2014-12-08T15:18:38Z |
5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
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Meng, CC; Chen, CH; Chang, YW; Huang, GW |
| 國立交通大學 |
2014-12-08T15:18:34Z |
A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs
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Cho, MH; Huang, GW; Wu, LK; Chiu, CS; Wang, YH; Chen, KM; Tsen, HC; Hsu, TL |
| 國立交通大學 |
2014-12-08T15:18:29Z |
Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
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Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, CF; Chang, CS; Huang, GW; Wang, TH |
| 國立交通大學 |
2014-12-08T15:18:20Z |
A scalable noise de-embedding technique for on-wafer microwave device characterization
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Cho, MH; Huang, GW; Wang, YH; Wu, LK |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
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Tseng, SC; Meng, CC; Li, YH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
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Meng, CC; Su, JY; Tsou, BC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:16:33Z |
An improved parameter-extraction method of SiGe HBTs' substrate network
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
顯示項目 11-60 / 77 (共2頁)
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