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Showing items 36-45 of 77  (8 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:25:51Z Hot-carrier induced degradations on RF power characteristics of SiGe heterojunction bipolar transistors Huang, SY; Chen, KM; Huang, GW; Hsu, TL; Tseng, HC; Chang, CY
國立交通大學 2014-12-08T15:25:49Z An accurate RF CMOS gate resistance model compatible with HSPICE Lin, HW; Chung, SS; Wong, SC; Huang, GW
國立交通大學 2014-12-08T15:25:25Z Impact of hot carrier stress on RF power characteristics of MOSFETs Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; Liang, V; Tseng, HC
國立交通大學 2014-12-08T15:25:25Z A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner Wu, TH; Meng, CC; Huang, GW
國立交通大學 2014-12-08T15:25:22Z Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling Wu, JW; You, JW; Ma, HC; Cheng, CC; Hsu, C; Huang, GW; Chang, CS; Wang, T
國立交通大學 2014-12-08T15:25:08Z Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown Huang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY
國立交通大學 2014-12-08T15:19:33Z An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT Chen, HY; Chen, KM; Huang, GW; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:19:20Z A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements Meng, CC; Hsu, SK; Wu, TH; Huang, GW
國立交通大學 2014-12-08T15:19:10Z RF MOSFET characterization by four-port measurement Wu, SD; Huang, GW; Chen, KM; Tseng, HC; Hsu, TL; Chang, CY
國立交通大學 2014-12-08T15:19:07Z A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator Meng, CC; Hsu, SK; Huang, GW

Showing items 36-45 of 77  (8 Page(s) Totally)
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