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"huang gw"的相關文件
顯示項目 56-65 / 77 (共8頁)
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| 國立交通大學 |
2014-12-08T15:18:20Z |
A scalable noise de-embedding technique for on-wafer microwave device characterization
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Cho, MH; Huang, GW; Wang, YH; Wu, LK |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The port-to-port isolation of the downconversion P-type micromixer using different N-well topologies
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Tseng, SC; Meng, CC; Li, YH; Huang, GW |
| 國立交通大學 |
2014-12-08T15:17:00Z |
The effect of selectively and fully ion-implanted collector on RF characteristics of BJT devices
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Meng, CC; Su, JY; Tsou, BC; Huang, GW |
| 國立交通大學 |
2014-12-08T15:16:33Z |
An improved parameter-extraction method of SiGe HBTs' substrate network
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Chen, HY; Chen, KM; Huang, GW; Chang, CY |
| 國立交通大學 |
2014-12-08T15:04:11Z |
LOW-TEMPERATURE EPITAXIAL-GROWTH OF SILICON AND SILICON-GERMANIUM ALLOY BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; CHANG, TC; LIN, HC; WANG, T; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:04:04Z |
CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
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CHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; HUANG, GW; WANG, PJ |
| 國立交通大學 |
2014-12-08T15:03:44Z |
CHARACTERIZATION OF THE SI/SIGE HETEROJUNCTION DIODE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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JUNG, TG; CHANG, CY; LIU, CS; CHANG, TC; LIN, HC; TSAI, WC; HUANG, GW; CHEN, LP |
| 國立交通大學 |
2014-12-08T15:03:15Z |
EPITAXY OF SI1-XGEX BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, TC; TSAI, WC; HUANG, GW; TSENG, HC; LIN, HC; CHANG, CY |
| 國立交通大學 |
2014-12-08T15:03:13Z |
ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
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TSAI, WC; CHANG, CY; JUNG, TG; LIOU, TS; HUANG, GW; CHANG, TC; CHEN, LP; LIN, HC |
| 國立交通大學 |
2014-12-08T15:03:04Z |
BORON INCORPORATION IN SI1-XGEX FILMS GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION USING SI2H6 AND GEH4
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CHEN, LP; CHOU, CT; HUANG, GW; TSAI, WC; CHANG, CY |
顯示項目 56-65 / 77 (共8頁)
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