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Showing items 6-15 of 42  (5 Page(s) Totally)
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Institution Date Title Author
國家衛生研究院 2019-10-18 Smart polymers for cell therapy and precision medicine Huang, HJ;Tsai, YL;Lin, SH;Hsu, SH
國家衛生研究院 2019-08-26 Combination of modified NS1 and NS3 as a novel vaccine strategy against dengue virus infection Kao, YS;Yu, CY;Huang, HJ;Tien, SM;Wang, WY;Yang, M;Anderson, R;Yeh, TM;Lin, YS;Wan, SW
國立交通大學 2014-12-08T15:45:07Z Deposition of polycrystalline Si and SiGe by ultra-high vacuum chemical molecular epitaxy Chen, KM; Huang, HJ; Chang, CY; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:45:07Z Study of boron effects on the reaction of Co and Si1-xGex at various temperatures Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:44:56Z Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:44:54Z Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY
國立交通大學 2014-12-08T15:44:34Z Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW
國立交通大學 2014-12-08T15:44:10Z Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCME Huang, HJ; Chen, KM; Chang, CY; Huang, TY
國立交通大學 2014-12-08T15:44:07Z The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP
國立交通大學 2014-12-08T15:43:51Z Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY

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