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"huang hsin hsiung"的相關文件
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| 國立成功大學 |
2018-01-19 |
地政士制度功能及契約責任－以不動產交易安全為中心
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黃信雄; Huang, Hsin-Hsiung |
| 國立交通大學 |
2017-04-21T06:49:08Z |
Self-separated freestanding GaN grown on patterned substrate by hydride vapor phase epitaxy
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Lai, Chih-Ming; Liu, Wen Yu; Tsay, Jenq-Dar; Liu, Po Chun; Guo, Yih-Der; Huang, Hsin-Hsiung; Chang, Yu Hsiang; Yeh, Jul Chin |
| 國立成功大學 |
2015-09-16 |
會計準則對分析師預測準確性之影響：以刪除Form 20-F調節表為例
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黃信雄; Huang, Hsin-Hsiung |
| 國立高雄應用科技大學 |
2015 |
著作權侵權防禦機制之資源配置策略
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黃信雄; Huang, Hsin-Hsiung |
| 國立交通大學 |
2014-12-16T06:15:50Z |
Etching method for nitride semiconductor
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Lee, Wei-I; Huang, Hsin-Hsiung; Zeng, Hung-Yu |
| 國立交通大學 |
2014-12-16T06:15:32Z |
METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
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LEE, Wei I; Huang, Hsin Hsiung; Chen, Kuei Ming; Yeh, Yen Hsien |
| 國立交通大學 |
2014-12-16T06:15:18Z |
METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF
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Lee Wei I; Huang Hsin Hsiung; Chen Kuei Ming; Yeh Yen Hsien |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Comparison between extended microtunnels along different crystal orientations in GaN
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Wu, Pei-Lun; Huang, Hsin-Hsiung; Zeng, Hung-Yu; Liu, Po-Chun; Lai, Chih-Ming; Tsay, Jeng-Dar; Lee, Wei-I |
| 國立交通大學 |
2014-12-08T15:40:36Z |
Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy
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Chen, Kuei-Ming; Huang, Hsin-Hsiung; Kuo, Yi-Lin; Wu, Pei-Lun; Chu, Ting-Li; Yu, Hung-Wei; Lee, Wei-I |
| 國立交通大學 |
2014-12-08T15:40:34Z |
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
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Huang, Hsin-Hsiung; Chao, Chu-Li; Chi, Tung-Wei; Chang, Yu-Lin; Liu, Po-Chun; Tu, Li-Wei; Tsay, Jenq-Dar; Kuo, Hao-Chung; Cheng, Shun-Jen; Lee, Wei-I |
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