|
"huang hui chun"的相关文件
显示项目 31-80 / 124 (共3页)
1 2 3 > >>
每页显示[10|25|50]项目
| 國立成功大學 |
2018-07-31 |
從組織工程到血管病理學中探討在不同微環境下適當流體剪力對於細胞反應的影響
|
黃惠君; Huang, Hui-Chun |
| 淡江大學 |
2018-06-05 |
Increased risk of developing psychiatric disorders in children with attention deficit and hyperactivity disorder (ADHD) receiving sensory integration therapy: a population-based cohort study
|
Tzang, Ruu-Fen;Chang, Yue-Cune;Kao, Kai-Liang;Huang, Yu-Hsin;Huang, Hui-Chun;Wang, Yu-Chiao;Muo, Chih-Hsin;Wu, Shu-I;Sung, Fung-Chang;Stewart, Robert |
| 國立成功大學 |
2018 |
微型核糖核酸於血流力學下調節內皮與平滑肌交互作用導致血管栓塞疾病之新穎機制
|
吳佳慶;黃惠君;王婷筠;方少禹;黃子婕;賴正偉; Wu, Chia-Ching;Huang, Hui-Chun;Wang, Ting-Yun;Fang, Shao-Yu;Huang, Tzu-Chieh;Lai, Jeng-Wei |
| 國立交通大學 |
2017-04-21T06:56:18Z |
Resistance Switching Characteristics Induced by O-2 Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory
|
Chen, Po-Hsun; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chen, Min-Chen; Su, Yu-Ting; Lin, Chih-Yang; Tseng, Yi-Ting; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:56:06Z |
Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory
|
Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:52Z |
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
|
Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:50Z |
Effects of erbium doping of indium tin oxide electrode in resistive random access memory
|
Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立交通大學 |
2017-04-21T06:55:32Z |
Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory
|
Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-10-31 |
Engineering interface-type resistance switching based on forming current compliance in ITO/Ga2O3: ITO/TiN resistance random access memory: Conduction mechanisms, temperature effects, and electrode influence
|
Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Po-Hsun; Chang-Chien, Shi-Wang; Chen, Min-Chen; Huang, Hui-Chun; Wu, Huaqiang; Deng, Ning; Qian, He; Sze, Simon M. |
| 國立成功大學 |
2016-10 |
Ultra-Low Switching Voltage Induced by Inserting SiO2 Layer in Indium-Tin-Oxide-Based Resistance Random Access Memory
|
Shih, Chih-Cheng; Chen, Wen-Jen; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Chu, Tian-Jian; Tseng, Yi-Ting; Wu, Cheng-Hsien; Su, Wan-Ching; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Chen, Jung-Hui; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-06 |
Reducing operation voltages by introducing a low-k switching layer in indium-tin-oxide-based resistance random access memory
|
Jin, Fu-Yuan; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Chen, Po-Hsun; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-05 |
Improving Performance by Doping Gadolinium Into the Indium-Tin-Oxide Electrode in HfO2-Based Resistive Random Access Memory
|
Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Wang, Ming-Hui; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Effects of erbium doping of indium tin oxide electrode in resistive random access memory
|
Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Lin, Chih-Yang; Jin, Fu-Yuan; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-03 |
Bulk Oxygen-Ion Storage in Indium-Tin-Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
|
Chen, Po-Hsun; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Lo, Ikai; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2016-02 |
Role of Excessive Autophagy Induced by Mechanical Overload in Vein Graft Neointima Formation: Prediction and Prevention
|
Chang, Ya-Ju; Huang, Hui-Chun; Hsueh, Yuan-Yu; Wang, Shao-Wei; Su, Fong-Chin; Chang, Chih-Han; Tang, Ming-Jer; Li, Yi-Shuan; Wang, Shyh-Hau; Shung, Kirk K.; Chien, Shu; Wu, Chia-Ching |
| 國立成功大學 |
2016 |
Communication-Effects of Oxygen Concentration Gradient on Resistive Switching Behavior in Oxygen Vacancy-Rich Electrodes
|
Pan, Chih-Hung; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Liang, Shu-Ping; Lin, Chih-Yang; Chen, Min-Chen; Chen, Po-Hsun; Syu, Yong-En; Huang, Hui-Chun; Sze, Simon M. |
| 國立成功大學 |
2016 |
Role of Excessive Autophagy Induced by Mechanical Overload in Vein Graft Neointima Formation: Prediction and Prevention (vol 6, 22147, 2016)
|
Chang, Ya-Ju; Huang, Hui-Chun; Hsueh, Yuan-Yu; Wang, Shao-Wei; Su, Fong-Chin; Chang, Chih-Han; Tang, Ming-Jer; Li, Yi-Shuan; Wang, Shyh-Hau; Shung, Kirk K.; Chien, Shu; Wu, Chia-Ching |
| 國立臺灣大學 |
2016 |
Atomoxetine could improve intra-individual variability in drug-naive adults with attention-deficit/hyperactivity disorder comparably with methylphenidate: A head-to-head randomized clinical trial
|
Ni, Hsing-Chang; Gu, Shoou-Lian Hwang; Lin, Hsiang-Yuan; Lin, Yu-Ju; Yang, Li-Kuang; Huang, Hui-Chun; Gau, Susan Shur-Fen; 林祥源; 高淑芬 |
| 國立交通大學 |
2015-12-02T02:59:17Z |
An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
|
Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M. |
| 國立成功大學 |
2015-08 |
An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access Memory
|
Zhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:31:00Z |
Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
|
Chen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2015-07-21T08:28:10Z |
Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立成功大學 |
2015-06 |
Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride-Oxidation on Indium Tin Oxide Electrode by Supercritical CO2 Fluid
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhang, Rui; Chen, Kai-Huang; Chen, Jung-Hui; Chen, Min-Chen; Huang, Hui-Chun; Zhang, Wei; Lin, Chih-Yang; Tseng, Yi-Ting; Lin, Hua-Ching; Zheng, Jin-Cheng; Sze, Simon M. |
| 國立臺灣大學 |
2015 |
超音波彈性造影量化與比較刮痧及缺血性壓迫法對於女性上斜方肌活動性激痛點之影響
|
黃卉君; Huang, Hui-Chun |
| 國立交通大學 |
2014-12-08T15:39:56Z |
Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatment
|
Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Huang, Hui-Chun; Chen, Shih-Ching; Lu, Jin; Gan, Der-Shin; Ho, New-Jin; Young, Tai-Fa; Jhang, Geng-Wei; Tai, Ya-Hsiang |
| 國立交通大學 |
2014-12-08T15:34:04Z |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
|
Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:33:45Z |
Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layer
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin |
| 國立交通大學 |
2014-12-08T15:32:05Z |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
|
Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:31:09Z |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:30:41Z |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
|
Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:30:22Z |
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Kai-Huang; Chen, Jung-Hui; Young, Tai-Fa; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Syu, Yong-En; Tung, Cheng-Wei; Chang, Geng-Wei; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Wu, Jia-Jie; Hu, Ying; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:51Z |
Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
|
Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Wu, Hsing-Hua; Chen, Jung-Hui; Syu, Yong-En; Chang, Geng-Wei; Chu, Tian-Jian; Liu, Guan-Ru; Su, Yu-Ting; Chen, Min-Chen; Pan, Jhih-Hong; Chen, Jian-Yu; Tung, Cheng-Wei; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:29:34Z |
Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory
|
Chen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Origin of Hopping Conduction in Sn-Doped Silicon Oxide RRAM With Supercritical CO2 Fluid Treatment
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Chang, Geng-Wei; Syu, Yong-En; Su, Yu-Ting; Liu, Guan-Ru; Liao, Kuo-Hsiao; Chen, Min-Chen; Huang, Hui-Chun; Tai, Ya-Hsiang; Gan, Der-Shin; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:28:27Z |
Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
|
Tsai, Tsung-Ming; Chang, Kuan-Chang; Chang, Ting-Chang; Syu, Yong-En; Chuang, Siang-Lan; Chang, Geng-Wei; Liu, Guan-Ru; Chen, Min-Chen; Huang, Hui-Chun; Liu, Shih-Kun; Tai, Ya-Hsiang; Gan, Der-Shin; Yang, Ya-Liang; Young, Tai-Fa; Tseng, Bae-Heng; Chen, Kai-Huang; Tsai, Ming-Jinn; Ye, Cong; Wang, Hao; Sze, Simon M. |
| 國立交通大學 |
2014-12-08T15:27:14Z |
Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applications
|
Huang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:22:06Z |
The role of the sub-thalamic nucleus in the preparation of volitional movement termination in Parkinson's disease
|
Hsu, Yi-Ting; Lai, Hsin-Yi; Chang, Yao-Chuan; Chiou, Shang-Ming; Lu, Ming-Kuei; Lin, Yu-Chin; Liu, Yen-Liang; Chen, Chiung-Chu; Huang, Hui-Chun; Chien, Ting-Fang; Lin, Shinn-Zong; Chen, You-Yin; Tsai, Chon-Haw |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Resistive switching characteristics of ytterbium oxide thin film for nonvolatile memory application
|
Tseng, Hsueh-Chih; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Po-Chun; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Sze, Simon M.; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:21:04Z |
Low temperature synthesis and electrical characterization of germanium doped Ti-based nanocrystals for nonvolatile memory
|
Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng |
| 國立交通大學 |
2014-12-08T15:20:50Z |
Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
|
Chen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn |
| 國立交通大學 |
2014-12-08T15:20:49Z |
Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applications
|
Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng |
| 國立交通大學 |
2014-12-08T15:08:03Z |
Role of germanium in the reduced temperature dependence of Ti-based nanocrystals formation for nonvolatile memory applications
|
Feng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Chang, Yao-Feng; Chen, Min-Chen; Huang, Hui-Chun |
| 臺北醫學大學 |
2014 |
Activation of N-methyl-D-aspartate receptor glycine site temporally ameliorates neuropsychiatric symptoms of Parkinson's disease with dementia
|
Tsai, Chon-Haw;Huang, Hui-Chun;Liu, Bey-Ling;Li, Chia-Ing;Lu, Ming-Kuei;Chen, Xianxiu;Tsai, Mu-Chieh;Yang, Yu-Wan;Lane, Hsien-Yuan |
| 國立臺灣大學 |
2014 |
Multi-scale symbolic entropy analysis provides prognostic prediction in patients receiving extracorporeal life support
|
Lin, Yen-Hung; Huang, Hui-Chun; Chang, Yi-Chung; Lin, Chen; Lo, Men-Tzung; Liu, Li-Yu Daisy; Tsai, Pi-Ru; Chen, Yih-Sharng; Ko, Wen-Je; Ho, Yi-Lwun; Chen, Ming-Fong; Peng, Chung-Kang; Buchman, Timothy G.; 陳益祥; 林彥宏; 陳明豐; 柯文哲; 黃惠君; 蔡壁如; 何奕倫 |
| 國立成功大學 |
2013-12-11 |
Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer
|
Chang, Kuan-; Huang, Jen-wei; Chang, Ting-Chang; Tsai, Tsung-Ming; Chen, Kai-Huang; Young, Tai-Fa; Chen, Jung-Hui; Zhang, Rui; Lou, Jen-Chung; Huang, Syuan-Yong; Pan, Yin-Chih; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Bao, Ding-Hua; Sze, Simon M. |
| 國立成功大學 |
2013-10 |
A head-to-head randomized clinical trial of methylphenidate and atomoxetine treatment for executive function in adults with attention-deficit hyperactivity disorder
|
Ni, Hsing-Chang; Shang, Chi-Yung; Gau, Susan Shur-Fen; Lin, Yu-Ju; Huang, Hui-Chun; Yang, Li-Kuang |
| 國立成功大學 |
2013-07-22 |
Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
|
Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn |
| 國立成功大學 |
2013-07 |
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
|
Syu, Yong-En; Zhang, Rui; Chang, Ting-Chang; Tsai, Tsung-Ming; Chang, Kuan-Chang; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Chen, Min-Chen; Yang, Ya-Liang; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Pan, Chih-Hung; Su, Yu-Ting; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M. |
| 中國文化大學 |
2013-06 |
GDP、出口與能源消耗之間的因果關係－以德國、法國和英國為例
|
黃惠君; Huang, Hui-Chun |
| 國立成功大學 |
2013-05 |
Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
|
Chang, Kuan-Chang; Pan, Chih-Hung; Chang, Ting-Chang; Tsai, Tsung-Ming; Zhang, Rui; Lou, Jen-Chung; Young, Tai-Fa; Chen, Jung-Hui; Shih, Chih-Cheng; Chu, Tian-Jian; Chen, Jian-Yu; Su, Yu-Ting; Jiang, Jhao-Ping; Chen, Kai-Huang; Huang, Hui-Chun; Syu, Yong-En; Gan, Der-Shin; Sze, Simon M. |
显示项目 31-80 / 124 (共3页)
1 2 3 > >>
每页显示[10|25|50]项目
|
