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Institution Date Title Author
國立交通大學 2018-01-24T07:37:01Z 介由移動位能陷阱的量子粒子傳輸 黃政傑; 寺西 慶哲; Huang, jheng-Jie; Yoshiaki, Teranishi
國立交通大學 2014-12-08T15:36:49Z Influence of Oxygen Concentration on Self-Compliance RRAM in Indium Oxide Film Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn; Zheng, Jin-Cheng; Bao, Ding-Hua
國立交通大學 2014-12-08T15:35:51Z Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.
國立交通大學 2014-12-08T15:33:04Z Low power consumption resistance random access memory with Pt/InOx/TiN structure Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Yu-Ting; Tseng, Hsueh-Chih; Chu, Ann-Kuo; Sze, Simon M.; Tsai, Ming-Jinn
國立交通大學 2014-12-08T15:32:05Z Impact of Electroforming Current on Self-Compliance Resistive Switching in an ITO/Gd:SiOx/TiN Structure Tseng, Hsueh-Chih; Chang, Ting-Chang; Wu, Yi-Chun; Wu, Sei-Wei; Huang, Jheng-Jie; Chen, Yu-Ting; Yang, Jyun-Bao; Lin, Tzu-Ping; Sze, Simon. M.; Tsai, Ming-Jinn; Wang, Ying-Lang; Chu, Ann-Kuo
國立交通大學 2014-12-08T15:31:21Z Insertion of a Si layer to reduce operation current for resistive random access memory applications Chen, Yu-Ting; Chang, Ting-Chang; Peng, Han-Kuang; Tseng, Hsueh-Chih; Huang, Jheng-Jie; Yang, Jyun-Bao; Chu, Ann-Kuo; Young, Tai-Fa; Sze, Simon M.
國立交通大學 2014-12-08T15:31:09Z Enhancement of the stability of resistive switching characteristics by conduction path reconstruction Huang, Jheng-Jie; Chang, Ting-Chang; Yu, Chih-Cheng; Huang, Hui-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Yang, Jyun-Bao; Sze, Simon M.; Gan, Der-Shin; Chu, Ann-Kuo; Lin, Jian-Yang; Tsai, Ming-Jinn
國立交通大學 2014-12-08T15:29:55Z Resistive switching characteristics of gallium oxide for nonvolatile memory application Yang, Jyun-Bao; Chang, Ting-Chang; Huang, Jheng-Jie; Chen, Shih-Ching; Yang, Po-Chun; Chen, Yu-Ting; Tseng, Hsueh-Chih; Sze, Simon M.; Chu, Ann-Kuo; Tsai, Ming-Jinn
國立交通大學 2014-12-08T15:29:55Z Investigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory Tseng, Hsueh-Chih; Chang, Ting-Chang; Cheng, Kai-Hung; Huang, Jheng-Jie; Chen, Yu-Ting; Jian, Fu-Yen; Sze, Simon M.; Tsai, Ming-Jinn; Chu, Ann-Kuo; Wang, Ying-Lang
國立交通大學 2014-12-08T15:29:34Z Influence of molybdenum doping on the switching characteristic in silicon oxide-based resistive switching memory Chen, Yu-Ting; Chang, Ting-Chang; Huang, Jheng-Jie; Tseng, Hsueh-Chih; Yang, Po-Chun; Chu, Ann-Kuo; Yang, Jyun-Bao; Huang, Hui-Chun; Gan, Der-Shin; Tsai, Ming-Jinn; Sze, Simon M.

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