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"huang ml"的相关文件
显示项目 26-50 / 78 (共4页)
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| 臺大學術典藏 |
2018-09-10T07:34:19Z |
InGaAs Metal Oxide Semiconductor Devices with Ga 2 O 3 (Gd 2 O 3) High-$κ$ Dielectrics for Science and Technology beyond Si CMOS
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Hong, M;Kwo, J;Lin, TD;Huang, ML; Hong, M; Kwo, J; Lin, TD; Huang, ML; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:19Z |
Energy-band parameters of atomic layer deposited Al 2 O 3 and HfO 2 on In x Ga As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Kwo, J;Hong, M; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:18Z |
Ga2O3 (Gd2O3) on Ge without interfacial layers—energy band parameters and metal oxide semiconductor devices
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Chu, LK;Lin, TD;Huang, ML;Chu, RL;Chang, CC;Kwo, J;Hong, M; Chu, LK; Lin, TD; Huang, ML; Chu, RL; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:14Z |
High performance self-aligned inversion-channel MOSFETs with In 0.53 Ga 0.47 As channel and ALD-Al 2 O 3 gate dielectric
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Chiu, HC;Chang, P;Huang, ML;Lin, TD;Chang, YH;Huang, JC;Chen, SZ;Kwo, J;Tsai, Wen-Ru;Hong, M; Chiu, HC; Chang, P; Huang, ML; Lin, TD; Chang, YH; Huang, JC; Chen, SZ; Kwo, J; Tsai, Wen-Ru; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Energy-band parameters of atomic-layer-deposited Al $ _ ${$2$}$ $ O $ _ ${$3$}$ $ and HfO $ _ ${$2$}$ $ on InxGa $ _ ${$1-x$}$ $ As
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Huang, ML;Chang, YC;Chang, YH;Lin, TD;Hong, M;Kwo, J; Huang, ML; Chang, YC; Chang, YH; Lin, TD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:13Z |
Advances on III-V MOSFET for Science and Technology beyond Si CMOS
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Kwo, JR;Lin, TD;Huang, ML;Chang, P;Lee, YJ;Hong, M; Kwo, JR; Lin, TD; Huang, ML; Chang, P; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:12Z |
High performance Ga 2 O 3 (Gd 2 O 3)/Ge MOS devices without interfacial layers
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Chu, LK;Chu, RL;Huang, ML;Tung, LT;Lin, TD;Chang, CC;Kwo, J;Hong, M; Chu, LK; Chu, RL; Huang, ML; Tung, LT; Lin, TD; Chang, CC; Kwo, J; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:34:11Z |
Nano-electronics of high $κ$ dielectrics on InGaAs for key technologies beyond Si CMOS
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Lin, TD;Chang, P;Chiu, HC;Chang, YC;Lin, CA;Chang, WH;Lee, YJ;Chang, YH;Huang, ML;Kwo, J;others; Lin, TD; Chang, P; Chiu, HC; Chang, YC; Lin, CA; Chang, WH; Lee, YJ; Chang, YH; Huang, ML; Kwo, J; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:24Z |
Atomic-layer-deposited HfO 2 on In 0.53 Ga 0.47 As: Passivation and energy-band parameters
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Chang, YC; Huang, ML; Lee, KY; Lee, YJ; Lin, TD; Hong, M; Kwo, J; Lay, TS; Liao, CC; Cheng, KY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Molecular beam epitaxy grown Ga2O3 (Gd2O3) high kappa dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics
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Lee, CH; Lin, TD; Tung, LT; Huang, ML; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:22Z |
Achieving 1 nm capacitive effective thickness in atomic layer deposited HfO 2 on In 0.53 Ga 0.47 As
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Lee, KY; Lee, YJ; Chang, P; Huang, ML; Chang, YC; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:19Z |
Si metal-oxide-semiconductor devices with high kappa HfO2 fabricated using a novel MBE template approach followed by atomic layer deposition
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Pan, CH; Kwo, J; Lee, KY; Lee, WC; Chu, LK; Huang, ML; Lee, YJ; Hong, M; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:17Z |
Sub-nanometer EOT scaling on In 0.53 Ga 0.47 As with atomic layer deposited HfO 2 as gate dielectric
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Lee, KY; Chang, P; Chang, YC; Huang, ML; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T07:01:14Z |
Interfacial-layers-free Ga2O3 (Gd2O3)/Ge MOS Diodes
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Lee, CH; Lin, TD; Lee, KY; Huang, ML; Tung, LT; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:22Z |
Structural and electrical characteristics of atomic layer deposited high kappa HfO2 on GaN
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Chang, YC; Chiu, HC; Lee, YJ; Huang, ML; Lee, KY; Hong, M; Chiu, YN; Kwo, J; Wang, Yeong-Her; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:20Z |
Cubic HfO2 doped with Y2O3 epitaxial films on GaAs (001) of enhanced dielectric constant
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Hsu, CH; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and magnetic properties of epitaxial Fe 3 Si/GaAs heterostructures
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Huang, ML; Chiu, YN; Ho, CC; Chang, P; Hsu, CH; Hong, M; Kwo, J; MINGHWEI HONG; Hsu, YL; Lee, YJ; Chang, YH |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Observation of room temperature ferromagnetic behavior in cluster-free, Co doped HfO2 films
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Chang, YH; Soo, YL; Lee, WC; Huang, ML; Lee, YJ; Weng, SC; Sun, WH; Hong, M; Kwo, J; Lee, SF; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:19Z |
Structural and compositional investigation of yttrium-doped HfO2 films epitaxially grown on Si (111)
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Yang, ZK; Lee, WC; Lee, YJ; Chang, P; Huang, ML; Hong, M; Yu, KL; Tang, MT; Lin, BH; Hsu, CH; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:18Z |
Defining new frontiers in electronic devices with high $κ$ dielectrics and interfacial engineering
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Hong, M; Lee, WC; Huang, ML; Chang, YC; Lin, TD; Lee, YJ; Kwo, J; Hsu, CH; Lee, HY; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
MOS Ge Diodes Based on High kappa Gate Dielectrics Grown by MBE and ALD
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Lee, Kun Yu; Lee, WC; Lin, TD; Lee, CS; Chang, YC; Lee, YJ; Huang, ML; Wu, YD; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:16Z |
The mechanism of Fermi level pinning/unpinning at high k Oxide/GaAs interface
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Huang, ML; Lee, WC; Chang, P; Lin, TD; Lee, YJ; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
MBE and ALD grown High k Dielectrics Gate Stacks on GaN
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Chang, YC; Lee, KY; Lee, WC; Lin, TD; Lee, YJ; Huang, ML; Hong, M; Kwo, J; Wang, YH; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:14Z |
Investigations of a New Diluted Magnetic Oxide with Room Temperature Ferromagnetism in Co-doped HfO2
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Chang, YH; Lee, WC; Huang, ML; Lee, SF; Soo, YL; Hong, M; Kwo, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T06:28:12Z |
A novel approach of using a MBE template for ALD growth of high-$κ$ dielectrics
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Lee, KY; Lee, WC; Huang, ML; Chang, CH; Lee, YJ; Chiu, YK; Wu, TB; Hong, M; Kwo, R; MINGHWEI HONG |
显示项目 26-50 / 78 (共4页)
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