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Showing items 26-30 of 30  (2 Page(s) Totally)
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Institution Date Title Author
國立臺灣大學 2005 以陽極氧化及硝酸氧化技術備製金氧半元件中氧化鋁高介電常數閘極介電層及其特性之研究 黃思維; Huang, Szu-Wei
國立臺灣大學 2004 Electrical characteristics of ultra-thin gate oxides (<3 nm) prepared by direct current superimposed with alternating-current anodization Chen, Zhi-Hao; Huang, Szu-Wei; Hwu, Jenn-Gwo
國立臺灣大學 2004 High-k Al2O3 gate dielectrics prepared by oxidation of aluminum film in nitric acid followed by high-temperature annealing Kuo, Chih-Sheng; Hsu, Jui-Feng; Huang, Szu-Wei; Lee, Lurng-Shehng; Tsai, Ming-Jinn; Hwu, Jenn-Gwo
國立臺灣大學 2004 Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation Huang, Szu-Wei; Hwu, Jenn-Gwo
國立臺灣大學 2003 Electrical Characterization and Process Control of Cost Effective High-k Aluminum Oxide Gate Dielectrics Prepared by Anodization Followed by Furnace Annealing Huang, Szu-Wei; Hwu, Jenn-Gwo

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