| 國立交通大學 |
2014-12-08T15:23:36Z |
A Novel Scheme for Fabricating CMOS Inverters With Poly-Si Nanowire Channels
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Kuo, Chia-Hao; Lin, Horng-Chih; Lee, I-Che; Cheng, Huang-Chung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:54Z |
Analytical Model of Subthreshold Current and Threshold Voltage for Fully Depleted Double-Gated Junctionless Transistor
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Lin, Zer-Ming; Lin, Horng-Chih; Liu, Keng-Ming; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:53Z |
A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
|
Su, Chun-Jung; Su, Tuan-Kai; Tsai, Tzu-I; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:22:31Z |
The Degradation of MILC P-Channel Poly-Si TFTs under Dynamic Hot-Carrier Stress Using a Novel Test Structure
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Lin, Cheng-I; Hong, Wen-Chiang; Lin, Tin-Fu; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:21:54Z |
Performance Enhancement of Thin-Film Transistors With Suspended Poly-Si Nanowire Channels by Embedding Silicon Nanocrystals in Gate Nitride
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Kuo, Chia-Hao; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:21:10Z |
Characteristics of n-Type Junctionless Poly-Si Thin-Film Transistors With an Ultrathin Channel
|
Lin, Horng-Chih; Lin, Cheng-I; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:20:40Z |
Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices
|
Lin, Horng-Chih; Lin, Zer-Ming; Chen, Wei-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:20:10Z |
Tri-gated Poly-Si Nanowire SONOS Devices
|
Hsu, Hsing-Hui; Liu, Ta-Wei; Lin, Chuan-Ding; Chia Kuo-Jung; Huang, Tiao-Yuan; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:18:18Z |
Novel poly-silicon nanowire field effect transistor for biosensing application
|
Hsiao, Cheng-Yun; Lin, Chih-Heng; Hung, Cheng-Hsiung; Su, Chun-Jung; Lo, Yen-Ren; Lee, Cheng-Che; Lin, Horng-Chin; Ko, Fu-Hsiang; Huang, Tiao-Yuan; Yang, Yuh-Shyong |
| 國立交通大學 |
2014-12-08T15:16:57Z |
Novel method of converting metallic-type carbon nanotubes to semiconducting-type carbon nanotube field-effect transistors
|
Chen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Pei, Zing-Way; Chao, Tien-Sheng; Lin, Horng-Chin; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:49Z |
Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer
|
Lu, Ching-Sen; Lin, Horng-Chih; Chen, Ying-Hung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:46Z |
Fabrication and characterization of poly-Si nanowire devices with performance enhancement techniques
|
Su, Chun-Jung; Lin, Homg-Chih; Tsai, Hsien-Hung; Huang, Tiao-Yuan; Ni, Wei-Xin |
| 國立交通大學 |
2014-12-08T15:16:17Z |
Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs
|
Lu, Ching-Sen; Lin, Horng-Chih; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:15Z |
Spatially resolving the degradation of SPC thin-film transistors under AC stress
|
Chang, Kai-Hsiang; Lee, Ming-Hsien; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Yao-Jen |
| 國立交通大學 |
2014-12-08T15:16:14Z |
A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
|
Chen, Bae-Horng; Wei, Jeng-Hua; Lo, Po-Yuan; Wang, Hung-Hsiang; Lai, Ming-Jinn; Tsai, Ming-Jinn; Chao, Tien Sheng; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:16:08Z |
Correlating drain-current with strain-induced mobility in nanoscale strained CMOSFETs
|
Lin, Hong-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin |
| 國立交通大學 |
2014-12-08T15:16:00Z |
Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors
|
Chen, Bae-Horng; Lin, Horng-Chih; Huang, Tiao-Yuan; Wei, Jeng-Hua; Hwang, Chien-Liang; Lo, Po-Yuan; Tsai, Ming-Jinn; Chao, Tien Sheng |
| 國立交通大學 |
2014-12-08T15:15:29Z |
Characterizing the channel backscattering behavior in nanoscale strained complementary metal oxide semiconductor field-effect transistors
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Lin, Hono-Nien; Chen, Hung-Wei; Ko, Chih-Hsin; Ge, Chung-Hu; Lin, Horng-Chih; Huang, Tiao-Yuan; Lee, Wen-Chin |
| 國立交通大學 |
2014-12-08T15:13:23Z |
Study of the gate-sensing and channel-sensing transient analysis method for monitoring the charge vertical location of SONOS-type devices
|
Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Lai, Erh-Kun; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:13:18Z |
High-performance and low-temperature-compatible p-channel polycrystalline-silicon TFTs using hafnium-silicate gate dielectric
|
Yang, Ming-Jui; Chien, Chao-Hsin; Lu, Yi-Hsien; Luo, Guang-Li; Chiu, Su-Ching; Lou, Chun-Che; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:13:06Z |
Water passivation effect on polycrystalline silicon nanowires
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Lin, Horng-Chih; Su, Chun-Jung; Hsiao, Cheng-Yun; Yang, Yuh-Shyong; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:54Z |
Ultrasensitive detection of dopamine using a polysilicon nanowire field-effect transistor
|
Lin, Chih-Heng; Hsiao, Cheng-Yun; Hung, Cheng-Hsiung; Lo, Yen-Ren; Lee, Cheng-Che; Su, Chun-Jung; Lin, Horng-Chin; Ko, Fu-Hsiang; Huang, Tiao-Yuan; Yang, Yuh-Shyong |
| 國立交通大學 |
2014-12-08T15:12:51Z |
A simple method for sub-100 nm pattern generation with I-line double-patterning technique
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Tsai, Tzu-I; Lin, Horng-Chih; Jian, Min-Feng; Huang, Tiao-Yuan; Chao, Tien-Sheng |
| 國立交通大學 |
2014-12-08T15:12:50Z |
Properties of Ge films grown through inductively coupled plasma chemical vapor deposition on SiO(2) substrates
|
Yang, Ming-Jui; Chien, Chao-Hsin; Shen, Chih-Yen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:20Z |
Electrical properties of low-temperature-compatible p-channel polycrystalline-silicon TFTs using high-kappa gate dielectrics
|
Yang, Ming-Jui; Chien, Chao-Hsin; Lu, Yi-Hsien; Shen, Chih-Yen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:12:04Z |
Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices
|
Hsu, Hsing-Hui; Lin, Horng-Chih; Luo, Cheng-Wei; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:58Z |
Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique
|
Lin, Horng-Chih; Tsai, Tzu-I; Chao, Tien-Sheng; Jian, Min-Feng; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:16Z |
A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate
|
Lin, Horng-Chih; Hsu, Hsing-Hui; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
|
Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:10:41Z |
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
|
Hsu, Hsing-Hui; Liu, Ta-Wei; Chan, Leng; Lin, Chuan-Ding; Huang, Tiao-Yuan; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:10:06Z |
Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer
|
Lee, Ko-Hui; Hsu, Hsing-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:52Z |
Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor
|
Hsu, Hsing-Hui; Lin, Horng-Chih; Chan, Leng; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:26Z |
Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer
|
Lu, Ching-Sen; Lin, Horng-Chih; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:22Z |
Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness
|
Lin, Horng-Chih; Chen, Wei-Chen; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:04Z |
Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Hong-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:08:41Z |
Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
|
Chen, Wei-Chen; Lin, Horng-Chih; Chang, Yu-Chia; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:08:26Z |
Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
|
Lin, Horng-Chih; Chang, Kai-Hsiang; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs
|
Lu, Ching-Sen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:24Z |
Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
|
Lin, Zer-Ming; Lin, Horng-Chih; Chen, Wei-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:08Z |
Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire Devices
|
Hsu, Hsing-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:08Z |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:01Z |
Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications
|
Lin, Horng-Chih; Liu, Ta-Wei; Hsu, Hsing-Hui; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:58Z |
Operation of a Novel Device With Suspended Nanowire Channels
|
Lin, Horng-Chih; Kuo, Chia-Hao; Li, Guan-Jang; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:37Z |
In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors
|
Chen, Wei-Chen; Lin, Horng-Chih; Chang, Yu-Chia; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:23Z |
Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors
|
Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lu, Chia-Yu; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:04:53Z |
Characteristics of poly-Si nanowire transistors with multiple-gate configurations
|
Hsu, Hsing-Hui; Lin, Homg-Chih; Lee, Ko-Hui; Huang, Jian-Fu; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:02:15Z |
A novel poly-Si nanowire TFT for nonvolatile memory applications
|
Hsu, Hsin-Hwei; Lin, Horng-Chih; Huang, Jian-Fu; Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S303 cells through reactive oxygen species and the mitochondria-dependent pathways
|
蔡宗叡;TSAI,JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
