| 國立交通大學 |
2014-12-08T15:12:04Z |
Impacts of Multiple-Gated Configuration on the Characteristics of Poly-Si Nanowire SONOS Devices
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Hsu, Hsing-Hui; Lin, Horng-Chih; Luo, Cheng-Wei; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:58Z |
Fabrication of sub-100-nm metal-oxide-semiconductor field-effect transistors with asymmetrical source/drain using I-line double patterning technique
|
Lin, Horng-Chih; Tsai, Tzu-I; Chao, Tien-Sheng; Jian, Min-Feng; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:16Z |
A novel multiple-gate polycrystalline silicon nanowire transistor featuring an inverse-T gate
|
Lin, Horng-Chih; Hsu, Hsing-Hui; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A study of gate-sensing and channel-sensing (GSCS) transient analysis method - Part II: Study of the intra-nitride behaviors and reliability of SONOS-type devices
|
Du, Pei-Ying; Lue, Hang-Ting; Wang, Szu-Yu; Huang, Tiao-Yuan; Hsieh, Kuang-Yeu; Liu, Rich; Lu, Chih-Yuan |
| 國立交通大學 |
2014-12-08T15:10:41Z |
Fabrication and Characterization of Multiple-Gated Poly-Si Nanowire Thin-Film Transistors and Impacts of Multiple-Gate Structures on Device Fluctuations
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Hsu, Hsing-Hui; Liu, Ta-Wei; Chan, Leng; Lin, Chuan-Ding; Huang, Tiao-Yuan; Lin, Horng-Chih |
| 國立交通大學 |
2014-12-08T15:10:06Z |
Performance Improvement of Polycrystalline Silicon Nanowire Thin-Film Transistors by a High-k Capping Layer
|
Lee, Ko-Hui; Hsu, Hsing-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:52Z |
Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor
|
Hsu, Hsing-Hui; Lin, Horng-Chih; Chan, Leng; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:26Z |
Improved hot carrier reliability in strained-channel NMOSFETS with TEOS buffer layer
|
Lu, Ching-Sen; Lin, Horng-Chih; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:22Z |
Performance Enhancement in Double-Gated Poly-Si Nanowire Transistors With Reduced Nanowire Channel Thickness
|
Lin, Horng-Chih; Chen, Wei-Chen; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:09:04Z |
Effects of Plasma Damage on Metal-insulator-Metal Capacitors and Transistors for Advanced Mixed-Signal/Radio-Frequency Metal-Oxide-Semiconductor Field-Effect Transistor Technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Hong-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:08:41Z |
Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
|
Chen, Wei-Chen; Lin, Horng-Chih; Chang, Yu-Chia; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:08:26Z |
Characterization of AC Hot-Carrier Effects in Poly-Si Thin-Film Transistors
|
Lin, Horng-Chih; Chang, Kai-Hsiang; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:33Z |
Optimization of SiN film by varying precursor flow conditions and its impacts on strained channel NMOSFETs
|
Lu, Ching-Sen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:24Z |
Insight into the performance enhancement of double-gated polycrystalline silicon thin-film transistors with ultrathin channel
|
Lin, Zer-Ming; Lin, Horng-Chih; Chen, Wei-Chen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:08Z |
Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire Devices
|
Hsu, Hsing-Hui; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:08Z |
A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO(2)/poly-gate complementary metal oxide semiconductor technology
|
Weng, Wu-Te; Lee, Yao-Jen; Lin, Horng-Chih; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:07:01Z |
Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications
|
Lin, Horng-Chih; Liu, Ta-Wei; Hsu, Hsing-Hui; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:58Z |
Operation of a Novel Device With Suspended Nanowire Channels
|
Lin, Horng-Chih; Kuo, Chia-Hao; Li, Guan-Jang; Su, Chun-Jung; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:37Z |
In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors
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Chen, Wei-Chen; Lin, Horng-Chih; Chang, Yu-Chia; Lin, Chuan-Ding; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:06:23Z |
Impacts of low-pressure chemical vapor deposition-SiN capping layer and lateral distribution of interface traps on hot-carrier stress of n-channel metal-oxide-semiconductor field-effect-transistors
|
Lu, Ching-Sen; Lin, Horng-Chih; Huang, Jian-Ming; Lu, Chia-Yu; Lee, Yao-Jen; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:04:53Z |
Characteristics of poly-Si nanowire transistors with multiple-gate configurations
|
Hsu, Hsing-Hui; Lin, Homg-Chih; Lee, Ko-Hui; Huang, Jian-Fu; Huang, Tiao-Yuan |
| 國立交通大學 |
2014-12-08T15:02:15Z |
A novel poly-Si nanowire TFT for nonvolatile memory applications
|
Hsu, Hsin-Hwei; Lin, Horng-Chih; Huang, Jian-Fu; Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI,JUNG-RUEY*;李克慧Lee, Ko-Hui Lee;林鴻志Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2014-03 |
Phenethyl isothiocyanate triggers apoptosis in human malignant melanoma A375.S303 cells through reactive oxygen species and the mitochondria-dependent pathways
|
蔡宗叡;TSAI,JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
| 亞洲大學 |
2013-10 |
A Gate-All-Around Floating-Gate Memory Device with Triangular-Shaped Poly-Si Nanowire Channels
|
蔡宗叡;TSAI, JUNG-RUEY;李克慧;Lee, Ko-Hui Lee;林鴻志;Lin, Horng-Chih;黃調元;Huang, Tiao-Yuan |
