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Taiwan Academic Institutional Repository >
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"huang ty"
Showing items 36-85 of 206 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:46:43Z |
Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory application
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Lin, M; Chang, CY; Huang, TY; Shieh, WY |
| 國立交通大學 |
2014-12-08T15:46:37Z |
Reliability of ultrathin gate oxides for ULSI devices
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Chang, CY; Chen, CC; Lin, HC; Liang, MS; Chien, CH; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:29Z |
Temperature-accelerated dielectric breakdown in ultrathin gate oxides
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Chen, CC; Chang, CY; Chien, CH; Huang, TY; Lin, HC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:46:25Z |
Highly (111) textured titanium nitride layers for sub- quarter-micrometer Al metallization
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Wu, WF; Lin, CC; Huang, CC; Lin, HC; Chang, TC; Yang, RP; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:20Z |
A novel lightly doped drain polysilicon thin-film transistor with oxide sidewall spacer formed by one-step selective liquid phase deposition
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Shih, PS; Chang, CY; Chang, TC; Huang, TY; Peng, DZ; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:46:15Z |
Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist
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Wang, MY; Ko, FH; Wang, TK; Yang, CC; Huang, TY |
| 國立交通大學 |
2014-12-08T15:46:05Z |
A multilevel interconnect technology with intrametal air gap for high-performance 0.25-mu m-and-beyond devices manufacturing
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Lin, M; Chang, CY; Huang, TY; Lin, ML |
| 國立交通大學 |
2014-12-08T15:46:00Z |
The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)
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Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:52Z |
Improved immunity to plasma damage in ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:46Z |
Effects of polysilicon gate doping concentration on plasma charging damage in ultrathin gate oxides
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:46Z |
The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
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Chang, CY; Lee, YS; Huang, TY; Shih, PS; Lin, CW |
| 國立交通大學 |
2014-12-08T15:45:36Z |
High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation
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Chang, SJ; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films
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Wuu, DS; Horng, RH; Liao, FC; Leu, CC; Huang, TY; Sze, SM; Chen, HY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:26Z |
Effects of O-2 plasma treatment on the electric and dielectric characteristics of Ba0.7Sr0.3TiO3 thin films
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Leu, CC; Chan, SH; Chen, HY; Horng, RH; Wuu, DS; Wu, LH; Huang, TY; Chang, CY; Sze, SM |
| 國立交通大學 |
2014-12-08T15:45:19Z |
Improvements of amorphous-silicon inverted-staggered thin-film transistors using high-temperature-deposited Al gate with chemical mechanical polishing
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Shih, PS; Chang, TC; Liang, CY; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:15Z |
Improved ultrathin gate oxide integrity in p(+)-polysilicon-gate p-channel metal oxide semiconductor with medium-dose fluorine implantation
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Chen, CC; Lin, HC; Chang, CY; Huang, TY; Chien, CH; Liang, MS |
| 國立交通大學 |
2014-12-08T15:45:10Z |
Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistors
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Shih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY |
| 國立交通大學 |
2014-12-08T15:45:07Z |
Study of boron effects on the reaction of Co and Si1-xGex at various temperatures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chang, TC; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:45:05Z |
Plasma-induced charging damage in ultrathin (3-nm) gate oxides
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Chen, CC; Lin, HC; Chang, CY; Liang, MS; Chien, CH; Hsien, SK; Huang, TY; Chao, TS |
| 國立交通大學 |
2014-12-08T15:44:57Z |
Plasma-process-induced damage in sputtered TiN metal-gate capacitors with ultrathin nitrided oxides
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Chen, CC; Lin, HC; Chang, CY; Chao, TS; Huang, TY; Liang, MS |
| 國立交通大學 |
2014-12-08T15:44:56Z |
Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:54Z |
Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si1-xGex source/drain
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Huang, HJ; Chen, KM; Chang, CY; Chen, LP; Huang, GW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:54Z |
An anomalous crossover in Vth roll-off for indium-doped nMOSFETs
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Chang, SJ; Chang, CY; Chen, CM; Chou, JW; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:51Z |
Reduced reverse narrow channel effect in thin SOI nMOSFETs
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Chang, CY; Chang, SJ; Chao, TS; Wu, SD; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:47Z |
Characterization and reliability of lightly-doped-drain polysilicon thin-film transistors with oxide sidewall spacer formed by one-step selective liquid phase deposition
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Shih, PS; Chang, TC; Huang, TY; Yeh, CF; Chang, CY |
| 國立交通大學 |
2014-12-08T15:44:45Z |
The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector
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Horng, GJ; Chang, CY; Ho, C; Lee, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:34Z |
Improved electrical properties of shallow p(+)-n junction using selectively grown graded Si1-xGex epitaxial structure
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY; Chen, LP; Huang, GW |
| 國立交通大學 |
2014-12-08T15:44:33Z |
High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
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Chang, SJ; Chang, CY; Chen, CM; Chao, TS; Lee, YJ; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:25Z |
The effects of super-steep-retrograde indium channel profile on deep submicron n-channel metal-oxide-semiconductor field-effect transistor
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Chen, CM; Chang, SJ; Chou, JW; Lin, T; Yeh, WK; Chang, CY; Luo, WZ; Lee, YJ; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:20Z |
A novel thin-film transistor with self-aligned field induced drain
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Lin, HC; Yu, CM; Lin, CY; Yeh, KL; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:44:10Z |
Electrical and compositional properties of co-silicided shallow p(+)-n junction using Si-capped/boron-doped Si1-xGex layer deposited by UHVCME
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Huang, HJ; Chen, KM; Chang, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:44:07Z |
The reaction of Co and Si1-xGex for MOSFET with poly-Si1-xGex gate
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Chen, KM; Huang, HJ; Chang, CY; Huang, TY; Huang, GW; Chen, LP |
| 國立交通大學 |
2014-12-08T15:43:58Z |
Schottky barrier thin-film transistor (SBTFT) with silicided source/drain and field-induced drain extension
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Lin, HC; Yeh, KL; Huang, RG; Lin, CY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:51Z |
Electrical properties of shallow p(+)-n junction using boron-doped Si1-xGex layer deposited by ultrahigh vacuum chemical molecular epitaxy
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Huang, HJ; Chen, KM; Chang, CY; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:41Z |
Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide
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Tsai, MY; Lin, HC; Lee, DY; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:40Z |
X-ray photoelectron spectroscopy of gate-quality silicon oxynitride films produced by annealing plasma-nitrided Si(100) in nitrous oxide
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Chen, HW; Landheer, D; Chao, TS; Hulse, JE; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:37Z |
Conduction mechanisms for off-state leakage current of Schottky barrier thin-film transistors
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Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:36Z |
Improved low temperature characteristics of p-channel MOSFETs with Si1-xGex raised source and drain
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Huang, HJ; Chen, KM; Huang, TY; Chao, TS; Huang, GW; Chien, CH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:43:27Z |
Electrical characteristics of thin cerium oxide film on silicon substrate by reactive DC sputtering
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Pan, TM; Chien, CH; Lei, TF; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:43:22Z |
Improving the RF performance of 0.18 mu m CMOS with deep n-well implantation
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Su, JG; Hsu, HM; Wong, SC; Chang, CY; Huang, TY; Sun, JYC |
| 國立交通大學 |
2014-12-08T15:43:09Z |
The effects of low-pressure rapid thermal post-annealing on the properties of (Ba,Sr)TiO3 thin films deposited by liquid source misted chemical deposition
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Yang, MJ; Chien, CH; Leu, CC; Zhang, RJ; Wu, SC; Huang, TY; Tseng, TY |
| 國立交通大學 |
2014-12-08T15:42:51Z |
Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate
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Wang, MF; Huang, TY; Kao, YC; Lin, HC; Chang, CY |
| 國立交通大學 |
2014-12-08T15:42:48Z |
Ambipolar Schottky-barrier TFTs
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Lin, HC; Yeh, KL; Huang, TY; Huang, RG; Sze, SM |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Enhanced negative-bias-temperature instability of P-channel metal-oxide-semiconductor transistors due to plasma charging damage
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Lee, DY; Lin, HC; Wang, MF; Tsai, MY; Huang, TY; Wang, TH |
| 國立交通大學 |
2014-12-08T15:42:37Z |
Reduction of off-state leakage current in Schottky barrier thin-film transistors (SBTFT) by a field-induced drain
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Yeh, KL; Lin, HC; Huang, RG; Tsai, RW; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:33Z |
RF CMOS technology for MMIC
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Chang, CY; Su, JG; Wong, SC; Huang, TY; Sun, YC |
| 國立交通大學 |
2014-12-08T15:42:26Z |
Characterization of thin ZrO2 films deposited using Zr(O '-Pr)(2)(thd)(2) and O-2 on Si(100)
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Chen, HW; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS; Huang, TY |
| 國立交通大學 |
2014-12-08T15:42:25Z |
Characteristics of polycrystalline silicon thin-film transistors with electrical source/drain extensions induced by a bottom sub-gate
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Yu, M; Lin, HC; Chen, GH; Huang, TY; Lei, TF |
| 國立交通大學 |
2014-12-08T15:42:23Z |
A silicon nanowire with a Coulomb blockade effect at room temperature
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Hu, SF; Wong, WZ; Liu, SS; Wu, YC; Sung, CL; Huang, TY; Yang, TJ |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Physical and electrical characterization of ZrO(2) gate insulators deposited on Si(100) using Zr(O(i)-Pr)(2)(thd)(2) and O(2)
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Chen, HW; Huang, TY; Landheer, D; Wu, X; Moisa, S; Sproule, GI; Chao, TS |
Showing items 36-85 of 206 (5 Page(s) Totally)
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